플라즈마파 트랜지스터의 성능을 평가하는 방법

Abstract

A method for evaluating the performance of a plasma transistor comprises: setting a plasma wave velocity, which is adjusted by a gate overdrive voltage, as a first axis; setting an electronic drift velocity, which is adjusted by a drain-to-source voltage, as a second axis; setting a channel length as a third axis; and checking whether the plasma wave transistor is operated as a terahertz emitter according to a change in the performance parameter value of the plasma wave transistor on the basis of a relational expression among the first axis, the second axis, and the third axis.