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박혜성

Park, Hyesung
Future Electronics and Energy Lab
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dc.citation.endPage 390 -
dc.citation.number 1 -
dc.citation.startPage 383 -
dc.citation.title IEEE TRANSACTIONS ON ELECTRON DEVICES -
dc.citation.volume 60 -
dc.contributor.author Lee, Kyeong-Jae -
dc.contributor.author Park, Hyesung -
dc.contributor.author Kong, Jing -
dc.contributor.author Chandrakasan, Anantha P. -
dc.date.accessioned 2023-12-22T04:15:41Z -
dc.date.available 2023-12-22T04:15:41Z -
dc.date.created 2014-10-07 -
dc.date.issued 2013-01 -
dc.description.abstract We have demonstrated a subthreshold FPGA system using monolithically integrated graphene wires. The graphene wires replace double-length lines in the interconnect fabric of a custom FPGA implemented in 0.18-μm CMOS. The four-layer graphene wires have lower capacitance than the CMOS aluminum wires, resulting in up to 2.11× faster speeds and 1.54× lower interconnect energy when driven by a low-swing voltage of 0.4 V. This paper presents the first graphene-based system application and experimentally demonstrates the potential of using low-capacitance graphene wires for ultralow power electronics. -
dc.identifier.bibliographicCitation IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.1, pp.383 - 390 -
dc.identifier.doi 10.1109/TED.2012.2225150 -
dc.identifier.issn 0018-9383 -
dc.identifier.scopusid 2-s2.0-84871800961 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/6971 -
dc.identifier.url https://ieeexplore.ieee.org/document/6353910/ -
dc.identifier.wosid 000316816200057 -
dc.language 영어 -
dc.publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC -
dc.title Demonstration of a Subthreshold FPGA Using Monolithically Integrated Graphene Interconnects -
dc.type Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor CMOS integrated circuits -
dc.subject.keywordAuthor graphene -
dc.subject.keywordAuthor interconnects -
dc.subject.keywordPlus 65 NM CMOS -
dc.subject.keywordPlus LEVEL CONVERTER -
dc.subject.keywordPlus VOLTAGE -
dc.subject.keywordPlus CONDUCTIVITY -
dc.subject.keywordPlus OPERATION -
dc.subject.keywordPlus PROCESSOR -
dc.subject.keywordPlus CIRCUITS -
dc.subject.keywordPlus ROBUST -
dc.subject.keywordPlus FILMS -
dc.subject.keywordPlus MV -

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