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Yoon, Tae-Sik
Nano Semiconductor Research Lab.
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Charge-Storage-Based vs. Non-Charge-Storage-Based 1T Non-Volatile Memory through the Interaction between Oxide Semiconductor Channel and Gate Oxide Layer

Author(s)
Han, JiminJeong, BoyoungNoh, TaeyunYoon, Tae-Sik
Issued Date
2023-03-08
URI
https://scholarworks.unist.ac.kr/handle/201301/67550
Citation
7th IEEE Electron Devices Technology and manufacturing (EDTM) Conference 2023, pp.26F-5
Publisher
IEEE

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