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- Yoon, Tae-Sik
- Nano Semiconductor Research Lab.
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Charge-Trap Memory Characteristics with UV/Ozone-Treated HfO2-x Gate Oxide and Oxide Semiconductor Channel Layer
- Author(s)
- Noh, Taeyun, Han, Jimin, Jeong, Boyoung, Yoon, Tae-Sik
- Issued Date
- 2023-03-09
- Citation
- 7th IEEE Electron Devices Technology and manufacturing (EDTM) Conference 2023, pp.P-031
- Publisher
- IEEE
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