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- Yoon, Tae-Sik
- Nano Semiconductor Research Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | KO | - |
| dc.citation.endPage | P-033 | - |
| dc.citation.startPage | P-033 | - |
| dc.citation.title | 7th IEEE Electron Devices Technology and manufacturing (EDTM) Conference 2023 | - |
| dc.contributor.author | Ko, Hanju | - |
| dc.contributor.author | Park, Kitae | - |
| dc.contributor.author | Moon, Sola | - |
| dc.contributor.author | Ryu, Jiyeon | - |
| dc.contributor.author | Sahu, Dwipak Prasad | - |
| dc.contributor.author | Yoon, Tae-Sik | - |
| dc.date.accessioned | 2023-12-20T10:35:10Z | - |
| dc.date.available | 2023-12-20T10:35:10Z | - |
| dc.date.created | 2023-12-19 | - |
| dc.date.issued | 2023-03-09 | - |
| dc.identifier.bibliographicCitation | 7th IEEE Electron Devices Technology and manufacturing (EDTM) Conference 2023, pp.P-033 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/66557 | - |
| dc.language | 영어 | - |
| dc.publisher | IEEE | - |
| dc.title | Resistive Switching Behaviors of CeO2–Based Memristors Depending on Electrode Materials for Non-Volatile Memory and Artificial Synaptic Device Applications | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2023-03-07 | - |
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