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Rational Approach for High-Efficiency Dopant-Free Solar Cells Characterized with Key Parameters

Author(s)
Kim, NamwooPark, SoohyeokCho, HyeinLee, JungtaekLee, MyounghyunUm, Han-DonSeo, Kwanyong
Issued Date
2023-11
DOI
10.1002/solr.202300536
URI
https://scholarworks.unist.ac.kr/handle/201301/66020
Citation
SOLAR RRL, v.7, no.21, pp.2300536
Abstract
Crystalline silicon (c-Si) solar cells have dominated the photovoltaic market due to their superior mechanical and thermal robustness, nonhazardous nature, optimal energy bandgap, and the availability of established manufacturing techniques. However, conventional c-Si solar cells fabricated through thermal doping processes present challenges such as high recombination rates and increased production costs. Recently, dopant-free solar cells have emerged as a promising next-generation approach; they offer numerous advantages, such as reduced recombination, cost-effectiveness, environmental friendliness, and applicability to nano- and submicrometer structures. This review evaluates the strengths and weaknesses of dopant-free passivating contact materials for emitters, tracing the development of dopant-free solar cells from the earliest reports to the current state-of-the-art. A systematic evaluation of these materials based on their electrical and optical properties, coating conformality, stability, and overall photovoltaic performance is presented. Moreover, the limitations of dopant-free solar cells are identified and strategies to further enhance their efficiency are proposed. Dopant-free crystalline silicon solar cells exhibit multiple advantages, including reduced recombination, cost-effectiveness, environmental friendliness, and applicability to nano- and submicrometer structures. This review discusses the evolution of dopant-free solar cells, operating principles underlying their functioning, key characteristics of materials used to form junctions in the cells, and strategies for improving their efficiencies.image (c) 2023 WILEY-VCH GmbH
Publisher
WILEY-V C H VERLAG GMBH
ISSN
2367-198X
Keyword (Author)
crystalline silicon solar cellsdopant-free passivating contact materialsemittersinterfacesSchottky junctions
Keyword
CURRENT-VOLTAGE CHARACTERISTICSPOWER CONVERSION EFFICIENCYTRANSITION-METAL OXIDESATOMIC LAYER DEPOSITIONTHIN-FILMMOLYBDENUM OXIDEC-SIAMORPHOUS-SILICONSCHOTTKY-BARRIERSURFACE RECOMBINATION

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