Full metadata record
DC Field | Value | Language |
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dc.citation.number | 3 | - |
dc.citation.startPage | 036107 | - |
dc.citation.title | APL PHOTONICS | - |
dc.citation.volume | 8 | - |
dc.contributor.author | Kim, Dasom | - |
dc.contributor.author | Kim, Dai-Sik | - |
dc.contributor.author | Choi, Geunchang | - |
dc.date.accessioned | 2023-12-21T12:47:44Z | - |
dc.date.available | 2023-12-21T12:47:44Z | - |
dc.date.created | 2023-03-31 | - |
dc.date.issued | 2023-03 | - |
dc.description.abstract | We demonstrated that an incident terahertz peak field amplitude below 0.01 MV/cm can trigger Zener tunneling in a semi-insulating GaAs. Moreover, a transmission decrease with an extinction ratio of 60% was observed in the semi-insulating GaAs with an electric field strength of up to 46 MV/cm (maximum incident peak field of similar to 0.29 MV/cm). These experimental results were realized by taking advantage of the nonlinear effects, such as Zener tunneling, impact ionization, and metal-insulator-metal tunneling in 5 nm metallic nanogaps on the GaAs; a strong field was locally confined in the vicinity of these gaps. The 5 nm gap enabled us to lower the voltage across the gap to suppress impact ionization while allowing Zener tunneling. Simulation results indicated that the effective thickness of the semiconductor increased as a function of the gap size. The approach used in this study decreases the threshold incident electric field for nonlinear responses as well as paves the way toward ultrathin high-speed electronic devices and ultrafast light pumps. | - |
dc.identifier.bibliographicCitation | APL PHOTONICS, v.8, no.3, pp.036107 | - |
dc.identifier.doi | 10.1063/5.0134501 | - |
dc.identifier.issn | 2378-0967 | - |
dc.identifier.scopusid | 2-s2.0-85149858048 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/65795 | - |
dc.identifier.wosid | 000947152300001 | - |
dc.language | 영어 | - |
dc.publisher | AIP Publishing | - |
dc.title | Enhanced terahertz nonlinear response of GaAs by the tight field confinement in a nanogap | - |
dc.type | Article | - |
dc.description.isOpenAccess | TRUE | - |
dc.relation.journalWebOfScienceCategory | Optics; Physics, Applied | - |
dc.relation.journalResearchArea | Optics; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | IMPACT IONIZATION | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
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