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DC Field | Value | Language |
---|---|---|
dc.citation.number | 2 | - |
dc.citation.startPage | 2301355 | - |
dc.citation.title | ADVANCED OPTICAL MATERIALS | - |
dc.citation.volume | 12 | - |
dc.contributor.author | Lee, Eunji | - |
dc.contributor.author | Dhakal, Krishna Prasad | - |
dc.contributor.author | Song, Hwayoung | - |
dc.contributor.author | Choi, Heenang | - |
dc.contributor.author | Chung, Taek-Mo | - |
dc.contributor.author | Oh, Saeyoung | - |
dc.contributor.author | Jeong, Hu Young | - |
dc.contributor.author | Marmolejo-Tejada, Juan M. | - |
dc.contributor.author | Mosquera, Martin A. | - |
dc.contributor.author | Duong, Dinh Loc | - |
dc.contributor.author | Kang, Kibum | - |
dc.contributor.author | Kim, Jeongyong | - |
dc.date.accessioned | 2023-12-21T11:47:04Z | - |
dc.date.available | 2023-12-21T11:47:04Z | - |
dc.date.created | 2023-09-07 | - |
dc.date.issued | 2024-01 | - |
dc.description.abstract | Germanium diselenide (GeSe2) is a 2D semiconductor with air stability, a wide bandgap, and anisotropic optical properties. The absorption and photoluminescence (PL) of single-crystalline 2D GeSe2 grown by metal-organic chemical vapor deposition and their dependence on temperature and polarization are studied. The PL spectra exhibit peaks at 2.5 eV (peak A) and 1.8 eV (peak B); peak A displays a strongly polarized emission along the short axis of the crystal, and peak B displays a weak polarization perpendicular to that of peak A. With increasing temperature, peak B shows anomalous behaviors, i.e., an increasing PL energy and intensity. The excitation energy-dependent PL, time-resolved PL, and density functional theory calculations suggest that peak A corresponds to the band-edge transition, whereas peak B originates from the inter-band mid-gap states caused by selenium vacancies passivated by oxygen atoms. The comprehensive study on the PL of single-crystalline GeSe2 sheds light on the origins of light emission in terms of the band structure of anisotropic GeSe2, making it beneficial for the corresponding optoelectronic applications. | - |
dc.identifier.bibliographicCitation | ADVANCED OPTICAL MATERIALS, v.12, no.2, pp.2301355 | - |
dc.identifier.doi | 10.1002/adom.202301355 | - |
dc.identifier.issn | 2195-1071 | - |
dc.identifier.scopusid | 2-s2.0-85168273334 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/65423 | - |
dc.identifier.wosid | 001049685600001 | - |
dc.language | 영어 | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Anomalous Temperature and Polarization Dependences of Photoluminescence of Metal-Organic Chemical Vapor Deposition-Grown GeSe2 | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Optics | - |
dc.relation.journalResearchArea | Materials Science; Optics | - |
dc.type.docType | Article; Early Access | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | 2D materials | - |
dc.subject.keywordAuthor | GeSe2 | - |
dc.subject.keywordAuthor | MOCVD | - |
dc.subject.keywordAuthor | photoluminescence | - |
dc.subject.keywordAuthor | polarization | - |
dc.subject.keywordAuthor | Se-vacancy | - |
dc.subject.keywordPlus | FEW-LAYER MOS2 | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | EXCITONS | - |
dc.subject.keywordPlus | DEFECTS | - |
dc.subject.keywordPlus | OXYGEN | - |
dc.subject.keywordPlus | MONO | - |
dc.subject.keywordPlus | WS2 | - |
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