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DC Field | Value | Language |
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dc.citation.endPage | 15786 | - |
dc.citation.number | 16 | - |
dc.citation.startPage | 15776 | - |
dc.citation.title | ACS NANO | - |
dc.citation.volume | 17 | - |
dc.contributor.author | Kim, Changhwan | - |
dc.contributor.author | Hur, Namwook | - |
dc.contributor.author | Yang, Jiho | - |
dc.contributor.author | Oh, Saeyoung | - |
dc.contributor.author | Yeo, Jeongin | - |
dc.contributor.author | Jeong, Hu Young | - |
dc.contributor.author | Shong, Bonggeun | - |
dc.contributor.author | Suh, Joonki | - |
dc.date.accessioned | 2023-12-21T11:52:13Z | - |
dc.date.available | 2023-12-21T11:52:13Z | - |
dc.date.created | 2023-08-02 | - |
dc.date.issued | 2023-08 | - |
dc.description.abstract | Scalable production and integration techniques for vander Waals(vdW) layered materials are vital for their implementation in next-generationnanoelectronics. Among available approaches, perhaps the most well-receivedis atomic layer deposition (ALD) due to its self-limiting layer-by-layergrowth mode. However, ALD-grown vdW materials generally require highprocessing temperatures and/or additional postdeposition annealingsteps for crystallization. Also, the collection of ALD-produciblevdW materials is rather limited by the lack of a material-specifictailored process design. Here, we report the annealing-free wafer-scalegrowth of monoelemental vdW tellurium (Te) thin films using a rationallydesigned ALD process at temperatures as low as 50 & DEG;C. They exhibitexceptional homogeneity/crystallinity, precise layer controllability,and 100% step coverage, all of which are enabled by introducing adual-function co-reactant and adopting a so-called repeating dosingtechnique. Electronically, vdW-coupled and mixed-dimensional verticalp-n heterojunctions with MoS2 and n-Si, respectively, aredemonstrated with well-defined current rectification as well as spatialuniformity. Additionally, we showcase an ALD-Te-based threshold switchingselector with fast switching time (& SIM;40 ns), selectivity (& SIM;10(4)), and low V (th) (& SIM;1.3 V).This synthetic strategy allows the low-thermal-budget production ofvdW semiconducting materials in a scalable fashion, thereby providinga promising approach for monolithic integration into arbitrary 3Ddevice architectures. | - |
dc.identifier.bibliographicCitation | ACS NANO, v.17, no.16, pp.15776 - 15786 | - |
dc.identifier.doi | 10.1021/acsnano.3c03559 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.scopusid | 2-s2.0-85165892387 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/65183 | - |
dc.identifier.wosid | 001027009500001 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Atomic Layer Deposition Route to Scalable, Electronic-Grade van der Waals Te Thin Films | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science | - |
dc.type.docType | Article; Early Access | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | 2D materials | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | tellurium | - |
dc.subject.keywordAuthor | thin-film growth | - |
dc.subject.keywordAuthor | vdW heterostructures | - |
dc.subject.keywordAuthor | nanoelectronics | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | 2-DIMENSIONAL MATERIALS | - |
dc.subject.keywordPlus | WAFER-SCALE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | MOS2 | - |
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