BROWSE

Related Researcher

Author

Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

ITEM VIEW & DOWNLOAD

Electrical study on indium-rich InGaN/GaN multi-quantum-well system

Cited 3 times inthomson ciCited 2 times inthomson ci
Title
Electrical study on indium-rich InGaN/GaN multi-quantum-well system
Author
Kim, E. KKim, J. S.Kwon, Soon-YongKim, H. J.Yoon, E.
Keywords
Deep-level transient spectroscopy;  Energy level;  InGaN/GaN;  Quantum well
Issue Date
200611
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.49, no.5, pp.2132 - 2135
Abstract
We studied the electrical properties of a 10-period InGaN/GaN multi-quantum-well (MQW) structure by using capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) methods. Two energy states of the InGaN QW appeared, are at about 0.37 eV and the other at 0.43 eV from the conduction band edge of the GaN barrier. Band-to-band transition energies of 3.10 eV and 3.18 eV were found by using the PL measurements. A defect with an activation energy of 0.39 eV and a cross-section of 3.96 × 10-18 cm 2 was also found in the GaN buffer layer. The energy-band diagram of InGaN/GaN QW structure is discussed using the PL and the DLTS parameters, considering the existence of a electron capture barrier.
URI
http://scholarworks.unist.ac.kr/handle/201301/6507
ISSN
0374-4884
Appears in Collections:
MSE_Journal Papers
Files in This Item:
There are no files associated with this item.

find_unist can give you direct access to the published full text of this article. (UNISTARs only)

Show full item record

qr_code

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

MENU