dc.citation.endPage |
392 |
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dc.citation.startPage |
391 |
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dc.citation.title |
AIP Conference Proceedings |
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dc.citation.volume |
893 |
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dc.contributor.author |
Moon, Pilkyung |
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dc.contributor.author |
Kim, Hee Jin |
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dc.contributor.author |
Kwon, Soon-Yong |
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dc.contributor.author |
Yoon, Euijoon |
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dc.contributor.author |
Park, Seoung-Hwan |
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dc.contributor.author |
Leburton, Jean-Pierre |
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dc.date.accessioned |
2023-12-22T09:38:20Z |
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dc.date.available |
2023-12-22T09:38:20Z |
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dc.date.created |
2014-09-24 |
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dc.date.issued |
2007 |
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dc.description.abstract |
We investigated the electronic structures of thin In-rich InGaN quantum well (QW) using an eight-band k center dot p method which includes the effects of strain and piezoelectric field. We compared two different valence band offsets (VBOs) reported in literatures: 0.48 eV and 1.05 eV. Also we investigated the effects of strain relaxation and Indium composition of InGaN layer and proved the accuracy of MEIS result. |
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dc.identifier.bibliographicCitation |
AIP Conference Proceedings, v.893, pp.391 - 392 |
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dc.identifier.doi |
10.1063/1.2729930 |
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dc.identifier.issn |
1551-7616 |
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dc.identifier.scopusid |
2-s2.0-41549132682 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/6500 |
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dc.identifier.url |
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=41549132682 |
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dc.identifier.wosid |
000246281800190 |
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dc.language |
영어 |
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dc.publisher |
American Institute of Physics Inc. |
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dc.title |
The electronic structures of In-Rich InGaN quantum well |
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dc.type |
Article |
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