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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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The electronic structures of In-Rich InGaN quantum well

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Title
The electronic structures of In-Rich InGaN quantum well
Author
Moon, PilkyungKim, Hee JinKwon, Soon-YongYoon, EuijoonPark, Seoung-HwanLeburton, Jean-Pierre
Keywords
In-rich InGaN quantum well;  Kp method;  Piezoelectric effect;  Strain relaxation;  Valence band offset
Issue Date
2007
Publisher
American Institute of Physics Inc.
Citation
AIP Conference Proceedings, v.893, no., pp.391 - 392
Abstract
We investigated the electronic structures of thin In-rich InGaN quantum well (QW) using an eight-band k center dot p method which includes the effects of strain and piezoelectric field. We compared two different valence band offsets (VBOs) reported in literatures: 0.48 eV and 1.05 eV. Also we investigated the effects of strain relaxation and Indium composition of InGaN layer and proved the accuracy of MEIS result.
URI
http://scholarworks.unist.ac.kr/handle/201301/6500
DOI
http://dx.doi.org/10.1063/1.2729930
ISSN
1551-7616
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MSE_Journal Papers
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