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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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AlGaN deep ultraviolet LEDs on bulk AIN substrates

Cited 9 times inthomson ciCited 9 times inthomson ci
Title
AlGaN deep ultraviolet LEDs on bulk AIN substrates
Author
Ren, ZaiyuanSun, Q.Kwon, Soon-YongHan, J.Davitt, K.Song, Y. K.Nurmikko, A. V.Liu, W.Smart, J.Schowalter, L.
Keywords
Bulk AlN; Deep ultra violet; Heteroepitaxial; Interrupted growth; Nitride semiconductors; Ultraviolet light emitting diodes
Issue Date
2007
Publisher
Wiley-VCH Verlag
Citation
Physica Status Solidi (C) Current Topics in Solid State Physics, v.4, no.7, pp.2482 - 2485
Abstract
We report the growth of sub-300 nm ultraviolet light emitting diodes (UV LEDs) on bulk AlN substrates. Heteroepitaxial evolution study through interrupted growth experiments revealed that AlxGa1-xN (x > 0.5) epilayers can be grown pseudomorphically with well-defined step-flow growth mode below a certain critical thickness. The build-up of compressive strain energy eventually induces a morphological roughening followed by the admission of misfit dislocations. LEDs grown on bulk AlN substrates exhibit noticable improvement over those on sapphire in device impedance, efficiency and thermal characteristics under high-level injection, pointing to a promising substrate platform for high performance III-nitride ultraviolet optoelectronics.
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DOI
http://dx.doi.org/10.1002/pssc.200674758
ISSN
1862-6351
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