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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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Heteroepitaxy of AlGaN on bulk AlN substrates for deep ultraviolet light emitting diodes

Cited 35 times inthomson ciCited 26 times inthomson ci
Title
Heteroepitaxy of AlGaN on bulk AlN substrates for deep ultraviolet light emitting diodes
Author
Ren, ZSun, Q.Kwon, Soon-YongHan, J.Davitt, K.Song, Y. KNurmikko, A. VCho, H.-KLiu, W.Smart, J. ASchowalter, L. J.
Keywords
Controlled growth; Elastic surface roughening; Heteroepitaxial nucleation; Stressor interlayers
Issue Date
2007
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.91, no.5, pp.1 - 3
Abstract
The authors report the growth of AlGaN epilayers and deep ultraviolet (UV) light emitting diodes (LEDs) on bulk AlN substrates. Heteroepitaxial nucleation and strain relaxation are studied through controlled growth interruptions. Due to a low density of preexisting dislocations in bulk AlN, the compressive strain during AlGaN heteroepitaxy cannot be relieved effectively. The built-up of strain energy eventually induces either an elastic surface roughening or plastic deformation via generation and inclination of dislocations, depending on the stressor interlayers and growth parameters used. AlGaN LEDs on bulk AlN exhibit noticeable improvements in performance over those on sapphire, pointing to a promising substrate platform for III-nitride UV optoelectronics.
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DOI
http://dx.doi.org/10.1063/1.2766841
ISSN
0003-6951
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MSE_Journal Papers
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