Heteroepitaxy of AlGaN on bulk AlN substrates for deep ultraviolet light emitting diodes
Cited 35 times inCited 26 times in
- Heteroepitaxy of AlGaN on bulk AlN substrates for deep ultraviolet light emitting diodes
- Ren, Z; Sun, Q.; Kwon, Soon-Yong; Han, J.; Davitt, K.; Song, Y. K; Nurmikko, A. V; Cho, H.-K; Liu, W.; Smart, J. A; Schowalter, L. J.
- Controlled growth; Elastic surface roughening; Heteroepitaxial nucleation; Stressor interlayers
- Issue Date
- AMER INST PHYSICS
- APPLIED PHYSICS LETTERS, v.91, no.5, pp.1 - 3
- The authors report the growth of AlGaN epilayers and deep ultraviolet (UV) light emitting diodes (LEDs) on bulk AlN substrates. Heteroepitaxial nucleation and strain relaxation are studied through controlled growth interruptions. Due to a low density of preexisting dislocations in bulk AlN, the compressive strain during AlGaN heteroepitaxy cannot be relieved effectively. The built-up of strain energy eventually induces either an elastic surface roughening or plastic deformation via generation and inclination of dislocations, depending on the stressor interlayers and growth parameters used. AlGaN LEDs on bulk AlN exhibit noticeable improvements in performance over those on sapphire, pointing to a promising substrate platform for III-nitride UV optoelectronics.
- ; Go to Link
Appears in Collections:
- MSE_Journal Papers
- Files in This Item:
can give you direct access to the published full text of this article. (UNISTARs only)
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.