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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices Lab.
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Observation of oxide precipitates in InN nanostructures

Author(s)
Kwon, Soon-YongRen, ZaiyuanSun, QianHan, JungKim, Young-WoonYoon, EuijoonKong, Bo HyunCho, Hyung KounKim, Il-JoongCheong, Hyeonsik
Issued Date
2007
DOI
10.1063/1.2822396
URI
https://scholarworks.unist.ac.kr/handle/201301/6496
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=36849067839
Citation
APPLIED PHYSICS LETTERS, v.91, no.23, pp.1 - 3
Abstract
We observed the formation of oxide precipitates (bcc-In(2)O(3)) in InN nanostructures formed during metal-organic chemical vapor deposition (MOCVD) and/or subsequent postgrowth procedures in H(2) ambient. It was found that InN is extremely unstable in H(2) ambient and the activation energy of N(2) desorption of InN is measured to be similar to 0.28 eV, which is one order of magnitude smaller than that of reported value of InN in vacuum. Instability of InN nanostructures under H(2) ambient together with residual oxidant in the reactor facilitates the formation of indium oxide precipitates in the nanostructure matrix during MOCVD or the oxidation of residual indium at the surface, resulting in indium oxide dots.
Publisher
AMER INST PHYSICS
ISSN
0003-6951

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