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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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Observation of oxide precipitates in InN nanostructures

Cited 3 times inthomson ciCited 4 times inthomson ci
Title
Observation of oxide precipitates in InN nanostructures
Author
Kwon, Soon-YongRen, ZaiyuanSun, QianHan, JungKim, Young-WoonYoon, EuijoonKong, Bo HyunCho, Hyung KounKim, Il-JoongCheong, Hyeonsik
Keywords
GROUP-III NITRIDES; THERMAL-STABILITY; INDIUM NITRIDE; QUANTUM DOTS; GROWTH; MOVPE; GAN; PRESSURES; HYDROGEN
Issue Date
2007
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.91, no.23, pp.1 - 3
Abstract
We observed the formation of oxide precipitates (bcc-In(2)O(3)) in InN nanostructures formed during metal-organic chemical vapor deposition (MOCVD) and/or subsequent postgrowth procedures in H(2) ambient. It was found that InN is extremely unstable in H(2) ambient and the activation energy of N(2) desorption of InN is measured to be similar to 0.28 eV, which is one order of magnitude smaller than that of reported value of InN in vacuum. Instability of InN nanostructures under H(2) ambient together with residual oxidant in the reactor facilitates the formation of indium oxide precipitates in the nanostructure matrix during MOCVD or the oxidation of residual indium at the surface, resulting in indium oxide dots.
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DOI
http://dx.doi.org/10.1063/1.2822396
ISSN
0003-6951
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MSE_Journal Papers
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