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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 3479 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 3470 | - |
dc.citation.title | ACS APPLIED ELECTRONIC MATERIALS | - |
dc.citation.volume | 5 | - |
dc.contributor.author | Jeong, Boyoung | - |
dc.contributor.author | Han, Jimin | - |
dc.contributor.author | Noh, Taeyun | - |
dc.contributor.author | Yoon, Tae-Sik | - |
dc.date.accessioned | 2023-12-21T12:38:29Z | - |
dc.date.available | 2023-12-21T12:38:29Z | - |
dc.date.created | 2023-07-19 | - |
dc.date.issued | 2023-05 | - |
dc.description.abstract | Write-once-read-many-times (WORM)memory characteristicswith alarge memory window are demonstrated in a thin-film transistor (TFT)composed of an indium-gallium-zinc oxide (IGZO) channel and a lithium-cobaltoxide (LiCoO x ) ion-supplying layer inthe gate oxide. While the device with a thicker (5 nm) tunneling oxideshowing a threshold voltage shift (Delta V (T)) of about 5 V by electron charging upon positive gate voltage (V (GS)) sweep to +25 V, the device with a 2 nm-thicktunneling oxide exhibits a large memory window with Delta V (T) > 20 V by Li-ion migration from LiCoO x to IGZO channel, which can be controlledas multilevel states with respect to the V (GS) amplitude. Incorporation of Li ions into the IGZO channel actingas p-type dopants reduces carrier concentration in the channel andconsequently increases V (T). The increased V (T) and the consequently reduced drain currentare not instantly restored back by applying negative V (GS), featuring WORM memory characteristics. Although thedevice undergoes partial retention loss, the retention remains upto about 90% after 100 min of retention time. These results verifyWORM memory operations in the IGZO TFTs through gate voltage-drivenLi-ion incorporation into the IGZO channel to modify its conductivestates instead of using a typical electrical charging route. | - |
dc.identifier.bibliographicCitation | ACS APPLIED ELECTRONIC MATERIALS, v.5, no.6, pp.3470 - 3479 | - |
dc.identifier.doi | 10.1021/acsaelm.3c00473 | - |
dc.identifier.issn | 2637-6113 | - |
dc.identifier.scopusid | 2-s2.0-85163361857 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64837 | - |
dc.identifier.wosid | 001011133600001 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Write-Once-Read-Many-Times Memory Characteristics with a Large Memory Window Operating at a Low Voltage by Li-Ion Incorporation from the LiCoO x Ion-Supplying Layer into the InGaZnO Channel of a Thin-Film Transistor | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Engineering; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | write-once-read-many-times memory | - |
dc.subject.keywordAuthor | thin-filmtransistor | - |
dc.subject.keywordAuthor | indium-gallium-zinc oxide | - |
dc.subject.keywordAuthor | LiCoO x | - |
dc.subject.keywordAuthor | Li ions | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | XPS | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | ZNO | - |
dc.subject.keywordPlus | TIN | - |
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