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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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Microstructural evolution in m-plane GaN growth on m-plane SiC

Cited 22 times inthomson ciCited 17 times inthomson ci
Title
Microstructural evolution in m-plane GaN growth on m-plane SiC
Author
Sun, QianKwon, Soon-YongRen, ZaiyuanHan, JungOnuma, TakeyoshiChichibu, Shigefusa F.Wang, Shaoping
Keywords
EPITAXIAL LATERAL OVERGROWTH; LASER-DIODES; SAPPHIRE
Issue Date
2008
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.92, no.5, pp.1 - 3
Abstract
This letter presents a study on the nucleation and microstructural evolution of m-plane GaN epilayers on m-plane SiC substrates using high-temperature AlN buffer layers. Controlled growth interruptions were carried out to render snapshots of heteroepitaxial dynamics. It was discovered that island coalescence results in an inhomogeneous mosaic tilt along the c-axis. Mesoscopic study of nucleation evolution helps elucidate the origin of commonly observed surface undulation and striation, which is attributed to concave growth due to the coalescence of trapezoidal islands upon contact. A model correlating microstructural defects with optical properties is proposed to explain the observed pattern in spatially resolved cathodoluminescence mapping.
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DOI
http://dx.doi.org/10.1063/1.2841671
ISSN
0003-6951
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MSE_Journal Papers
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