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- Kim, Jin Young
- Next Generation Energy Lab.
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Multilayer bipolar field-effect transistors
- Author(s)
- Cho, Shinuk, Yuen, Jonathan, Kim, Jin Young, Lee, Kwanghee, Heeger, Alan J., Lee, Sangyun
- Issued Date
- 2008-02
- Citation
- APPLIED PHYSICS LETTERS, v.92, no.6, pp.1 - 3
- Abstract
- Field-effect transistors comprising a layer of regioregular poly(3-hexylthiophene) (rr-P3HT) separated from a parallel layer of the soluble fullerene,[6,6]-phenyl C-61-butyric acid methyl ester (PCBM) by a layer of titanium suboxide (TiOx), are fabricated by solution processing. Because the TiOx is an electron transporting material and a hole blocking material, this multilayer architecture operates either in the p-channel mode with holes in the rr-P3HT layer or in the n-channel mode with electrons in the PCBM layer.
- Publisher
- AMER INST PHYSICS
- ISSN
- 0003-6951
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