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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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Optical and microstructural studies of atomically flat ultrathin In-rich InGaN/GaN multiple quantum wells

Cited 14 times inthomson ciCited 11 times inthomson ci
Title
Optical and microstructural studies of atomically flat ultrathin In-rich InGaN/GaN multiple quantum wells
Author
Kwon, Soon-YongKim, Hee JinYoon, EuijoonJang, YudongYee, Ki-JuLee, DonghanPark, Seoung-HwanPark, Do-YoungCheong, HyeonsikRol, FabianDang, Le Si
Issue Date
200805
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.103, no.6, pp.1 - 4
Abstract
Optical and microstructural properties of atomically flat ultrathin In-rich (UTIR) InGaN/GaN multiple quantum well were investigated by means of photoluminescence (PL), time-resolved PL (TRPL), and cathodoluminescence (CL) experiments. The sample exhibits efficient trapping of the photoexcited carriers into quantum wells (QWs) and the effect of internal electric field in the QWs was found negligible by excitation power-dependent PL and TRPL. These phenomena were attributed to the nature of UTIR InGaN QWs, indicating the potential of this system for application in optoelectronic devices. Variation of TRPL lifetime across the PL band and spatially resolved monochromatic CL mapping images strongly suggest that there is micrometer-scale inhomogeneity in effective band gap in UTIR InGaN/GaN QWs, which is originated from two types of localized areas.
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DOI
http://dx.doi.org/10.1063/1.2874494
ISSN
0021-8979
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MSE_Journal Papers
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