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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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Compositional analysis of In-rich InGaN layers grown on GaN templates by metalorganic chemical vapor deposition

Cited 14 times inthomson ciCited 18 times inthomson ci
Title
Compositional analysis of In-rich InGaN layers grown on GaN templates by metalorganic chemical vapor deposition
Author
Kim, Hee JinShin, YooriKwon, Soon-YongKwon, Soon-YongKim, Hyun JinChoi, SukHong, SukwonKim, Chang SooYoon, Jung-WonCheong, HyeonsikYoon, Euijoon
Keywords
A1. X-ray diffraction; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting ternary compounds
Issue Date
200806
Publisher
ELSEVIER SCIENCE BV
Citation
JOURNAL OF CRYSTAL GROWTH, v.310, no.12, pp.3004 - 3008
Abstract
In-rich InGaN layers were successfully grown on GaN templates by metalorganic chemical vapor deposition. In incorporation in InGaN layer was enhanced by decreasing the growth temperature, and In-rich InGaN layer with In content higher than 70% was obtained below 670 °C. Especially, double peaks from In-rich InGaN grown at 640 °C appeared in X-ray diffraction pattern and photoluminescence (PL). The further investigation of strain status of InGaN layers by reciprocal space mapping (RSM) clarified that In-rich InGaN layers were fully relaxed and consisted of InGaN alloys of two different In contents of 82% and 97%, respectively. As a result, we confirmed that compositional inhomogeneity which is mainly reported in Ga-rich InGaN layer could exist in In-rich InGaN layer higher than 80%. We also investigated In incorporation behavior in InGaN at low temperature (640 °C). In content in InGaN layer was found to be controlled by just changing input gas phase mole fraction (TMIn/(TMGa+TMIn)) at low growth temperature and a linear relationship was observed between In content in InGaN layers and gas phase mole fraction.
URI
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DOI
http://dx.doi.org/10.1016/j.jcrysgro.2008.02.032
ISSN
0022-0248
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