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DC Field | Value | Language |
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dc.citation.endPage | 3829 | - |
dc.citation.number | 15 | - |
dc.citation.startPage | 3824 | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 311 | - |
dc.contributor.author | Sun, Qian | - |
dc.contributor.author | Yerino, Christopher D. | - |
dc.contributor.author | Zhang, Yu | - |
dc.contributor.author | Cho, Yong Suk | - |
dc.contributor.author | Kwon, Soon-Yong | - |
dc.contributor.author | Kong, Bo Hyun | - |
dc.contributor.author | Cho, Hyung Koun | - |
dc.contributor.author | Lee, In-Hwan | - |
dc.contributor.author | Han, Jung | - |
dc.date.accessioned | 2023-12-22T07:44:15Z | - |
dc.date.available | 2023-12-22T07:44:15Z | - |
dc.date.created | 2014-09-24 | - |
dc.date.issued | 2009-07 | - |
dc.description.abstract | This paper reports a study of the effect of NH3 flow rate on m-plane GaN growth on m-plane SiC with an AlN buffer layer. It is found that a reduced NH3 flow rate during m-plane GaN growth can greatly improve the recovery of in situ optical reflectance and the surface morphology, and narrow down the on-axis (1 0 1̄ 0) X-ray rocking curve (XRC) measured along the in-plane a-axis. The surface striation along the in-plane a-axis, a result of GaN island coalescence along the in-plane c-axis, strongly depends on the NH3 flow rate, an observation consistent with our recent study of kinetic Wulff plots. The pronounced broadening of the (1 0 1̄ 0) XRC measured along the c-axis is attributed to the limited lateral coherence length of GaN domains along the c-axis, due to the presence of a high density of basal-plane stacking faults, most of which are formed at the GaN/AlN interface, according to transmission electron microscopy. | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.311, no.15, pp.3824 - 3829 | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2009.06.035 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.scopusid | 2-s2.0-67650354062 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/6443 | - |
dc.identifier.url | https://linkinghub.elsevier.com/retrieve/pii/S0022024809006149 | - |
dc.identifier.wosid | 000269272300003 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Effect of NH3 flow rate on m-plane GaN growth on m-plane SiC by metalorganic chemical vapor deposition | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scopus | - |
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