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DC Field | Value | Language |
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dc.citation.number | 1 | - |
dc.citation.startPage | 17524 | - |
dc.citation.title | SCIENTIFIC REPORTS | - |
dc.citation.volume | 11 | - |
dc.contributor.author | Yoo, Dongha | - |
dc.contributor.author | Lee, Keundong | - |
dc.contributor.author | Tchoe, Youngbin | - |
dc.contributor.author | Guha, Puspendu | - |
dc.contributor.author | Ali, Asad | - |
dc.contributor.author | Saroj, Rajendra K. | - |
dc.contributor.author | Lee, Seokje | - |
dc.contributor.author | Islam, A. B. M. Hamidul | - |
dc.contributor.author | Kim, Miyoung | - |
dc.contributor.author | Yi, Gyu-Chul | - |
dc.date.accessioned | 2023-12-21T15:13:28Z | - |
dc.date.available | 2023-12-21T15:13:28Z | - |
dc.date.created | 2023-06-07 | - |
dc.date.issued | 2021-09 | - |
dc.description.abstract | This paper describes the fabrication process and characteristics of dimension- and position-controlled gallium nitride (GaN) microstructure arrays grown on graphene films and their quantum structures for use in flexible light-emitting device applications. The characteristics of dimension- and position-controlled growth, which is crucial to fabricate high-performance electronic and optoelectronic devices, were investigated using scanning and transmission electron microscopes and power-dependent photoluminescence spectroscopy measurements. Among the GaN microstructures, GaN microrods exhibited excellent photoluminescence characteristics including room-temperature stimulated emission, which is especially useful for optoelectronic device applications. As one of the device applications of the position-controlled GaN microrod arrays, we fabricated light-emitting diodes (LEDs) by heteroepitaxially growing InxGa1-xN/GaN multiple quantum wells (MQWs) and a p-type GaN layer on the surfaces of GaN microrods and by depositing Ti/Au and Ni/Au metal layers to prepare n-type and p-type ohmic contacts, respectively. Furthermore, the GaN microrod LED arrays were transferred onto Cu foil by using the chemical lift-off method. Even after being transferred onto the flexible Cu foil substrate, the microrod LEDs exhibited strong emission of visible blue light. The proposed method to enable the dimension- and position-controlled growth of GaN microstructures on graphene films can likely be used to fabricate other high-quality flexible inorganic semiconductor devices such as micro-LED displays with an ultrahigh resolution. | - |
dc.identifier.bibliographicCitation | SCIENTIFIC REPORTS, v.11, no.1, pp.17524 | - |
dc.identifier.doi | 10.1038/s41598-021-97048-2 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.scopusid | 2-s2.0-85114171618 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64434 | - |
dc.identifier.wosid | 000692507200041 | - |
dc.language | 영어 | - |
dc.publisher | NATURE PORTFOLIO | - |
dc.title | Dimension- and position-controlled growth of GaN microstructure arrays on graphene films for flexible device applications | - |
dc.type | Article | - |
dc.description.isOpenAccess | TRUE | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
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