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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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Growth of Semiconducting Graphene on Palladium

Cited 135 times inthomson ciCited 125 times inthomson ci
Title
Growth of Semiconducting Graphene on Palladium
Author
Kwon, Soon-YongCiobanu, Cristian VPetrova, VaniaShenoy, Vivek BBareno, JavierGambin, VincentKodambaka, SuneelPetrov, Ivan
Keywords
Band gaps; Carbon-based nanoelectronics; Density functional theory calculations; Direct deposition; Graphene growth; Graphene layers; Graphenes; In-situ scanning tunneling microscopies; Scanning tunneling spectroscopy; Semiconducting behavior; Strong interaction; Surface steps; Topographic images
Issue Date
200912
Publisher
AMER CHEMICAL SOC
Citation
NANO LETTERS, v.9, no.12, pp.3985 - 3990
Abstract
We report in situ scanning tunneling microscopy studies of graphene growth on Pd(111) during ethylene deposition at temperatures between 723 and 1023 K. We observe the formation of monolayer graphene islands, 200-2000 A in size, bounded by Pd surface steps. Surprisingly, the topographic image contrast from graphene islands reverses with tunneling bias, suggesting a semiconducting behavior. Scanning tunneling spectroscopy measurements confirm that the graphene islands are semiconducting, with a band gap of 0.3 ± 0.1 eV. On the basis of density functional theory calculations, we suggest that the opening of a band gap is due to the strong interaction between graphene and the Pd substrate. Our findings point to the possibility of preparing semiconducting graphene layers for future carbon-based nanoelectronic devices via direct deposition onto strongly interacting substrates.
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DOI
http://dx.doi.org/10.1021/nl902140j
ISSN
1530-6984
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