Growth of Semiconducting Graphene on Palladium
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- Growth of Semiconducting Graphene on Palladium
- Kwon, Soon-Yong; Ciobanu, Cristian V; Petrova, Vania; Shenoy, Vivek B; Bareno, Javier; Gambin, Vincent; Kodambaka, Suneel; Petrov, Ivan
- Band gaps; Carbon-based nanoelectronics; Density functional theory calculations; Direct deposition; Graphene growth; Graphene layers; Graphenes; In-situ scanning tunneling microscopies; Scanning tunneling spectroscopy; Semiconducting behavior; Strong interaction; Surface steps; Topographic images
- Issue Date
- AMER CHEMICAL SOC
- NANO LETTERS, v.9, no.12, pp.3985 - 3990
- We report in situ scanning tunneling microscopy studies of graphene growth on Pd(111) during ethylene deposition at temperatures between 723 and 1023 K. We observe the formation of monolayer graphene islands, 200-2000 A in size, bounded by Pd surface steps. Surprisingly, the topographic image contrast from graphene islands reverses with tunneling bias, suggesting a semiconducting behavior. Scanning tunneling spectroscopy measurements confirm that the graphene islands are semiconducting, with a band gap of 0.3 ± 0.1 eV. On the basis of density functional theory calculations, we suggest that the opening of a band gap is due to the strong interaction between graphene and the Pd substrate. Our findings point to the possibility of preparing semiconducting graphene layers for future carbon-based nanoelectronic devices via direct deposition onto strongly interacting substrates.
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