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DC Field | Value | Language |
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dc.citation.startPage | 169858 | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 951 | - |
dc.contributor.author | Han, Jimin | - |
dc.contributor.author | Jeong, Boyoung | - |
dc.contributor.author | Sahu, Dwipak Prasad | - |
dc.contributor.author | Kim, Hyun-Mi | - |
dc.contributor.author | Yoon, Tae-Sik | - |
dc.date.accessioned | 2023-12-21T11:49:19Z | - |
dc.date.available | 2023-12-21T11:49:19Z | - |
dc.date.created | 2023-05-24 | - |
dc.date.issued | 2023-08 | - |
dc.description.abstract | Non-volatile charge-trap memory characteristics were investigated in the thin-film transistors with an indium-gallium-zinc oxide channel and an oxygen-deficient hafnium oxide (HfO2-x) charge-trap layer de-posited by atomic layer deposition (ALD). The HfO2-x charge-trap layer was subsequently UV/ozone treated to convert its surface to more insulating tunneling oxide. The HfO2-x charge-trap layer deposited at a low temperature of 50 degrees C was found to have a high defect density to store electrons with an areal density of 1.57 x 1012 cm-2 calculated from the threshold voltage (VT) shift of 30 V. The VT shifted positively as a result of electron charging in the charge-trap layer by applying positive gate bias, and then reduced back re-versibly by applying negative bias. Also, the shifted VT is retained over time, rendering non-volatile memory characteristics. The improved reliability of charge storage is expected to come from eliminating trap states at the interface by UV/ozone treatment. It also simplifies the overall fabrication process by removing ad-ditional processing steps of tunneling oxide layer deposition. The proposed device turned out to have a large memory window thanks to the high trap density in the HfO2-x charge-trap layer deposited by low -tem-perature ALD and the good non-volatility by using UV/ozone treatment.(c) 2023 Elsevier B.V. All rights reserved. | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.951, pp.169858 | - |
dc.identifier.doi | 10.1016/j.jallcom.2023.169858 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.scopusid | 2-s2.0-85151659321 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64289 | - |
dc.identifier.wosid | 000982189300001 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Non-volatile charge-trap memory characteristics with low-temperature atomic layer deposited HfO2-x charge-trap layer and interfacial tunneling oxide formed by UV/ozone treatment | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical; Materials Science, Multidisciplinary; Metallurgy & Metallurgical Engineering | - |
dc.relation.journalResearchArea | Chemistry; Materials Science; Metallurgy & Metallurgical Engineering | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Non-volatile memory | - |
dc.subject.keywordAuthor | Charge -trap memory | - |
dc.subject.keywordAuthor | Thin-film transistor | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | UV | - |
dc.subject.keywordAuthor | ozone treatment | - |
dc.subject.keywordPlus | SONOS | - |
dc.subject.keywordPlus | ELECTRICAL CHARACTERISTICS | - |
dc.subject.keywordPlus | DEGRADATION | - |
dc.subject.keywordPlus | PERFORMANCE | - |
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