Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

Abstract

The properties of WNxCy films deposited by atomic layer deposition (ALD) using WF6, NH3, and triethyl boron as source gases were characterized as a diffusion barrier for copper metallization. It is noted that the as-deposited film shows an extremely low resistivity of about 350 muOmega cm with a film density of 15.37 g/cm(3). The film composition measured from Rutherford backscattering spectrometry shows W, C, and N of similar to48, 32, and 20 at. %, respectively. Transmission electron microscopy analyses show that the as-deposited film is composed of face-centered-cubic phase with a lattice parameter similar to both beta-WC1-x and beta-W2N with an equiaxed microstructure. The barrier property of this ALD-WNxCy film at a nominal thickness of 12 nm deposited between Cu and Si fails only after annealing at 700 degreesC for 30 min. (C) 2003 American Institute of Physics.