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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | G197 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | G195 | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 7 | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Hwang, Eui-Sung | - |
dc.contributor.author | Han, Sang-Yup | - |
dc.contributor.author | Pyi, Seung-Ho | - |
dc.contributor.author | Kawk, Nohjung | - |
dc.contributor.author | Sohn, Hyunchul | - |
dc.contributor.author | Kim, Jinwoong | - |
dc.contributor.author | Choi, Gi Bo | - |
dc.date.accessioned | 2023-12-22T10:43:52Z | - |
dc.date.available | 2023-12-22T10:43:52Z | - |
dc.date.created | 2023-01-30 | - |
dc.date.issued | 2004-08 | - |
dc.description.abstract | Tungsten (W) thin film as a nucleation layer for a W plug-fill process was deposited using a modified chemical vapor deposition (CVD) called pulsed CVD, and properties of the films were investigated. Basically, the deposition stage was composed of four separate steps for one deposition cycle: (i) reaction of WF6 with SiH4; (ii) inert gas purge; (iii) SiH4 exposure without WF6; and (iv) inert gas purge. A higher deposition rate, similar to1.5 nm/cycle, was obtained as compared to that of atomic layer deposition (ALD) (similar to0.25 nm/cycle). The film deposited by pulsed CVD showed a much lower root mean square (rms) roughness (0.87 nm) and better conformality at the contact holes with an aspect ratio of 14 (contact height: 3.51 mum and top diameter: 240 nm) as compared to the layer deposited by conventional CVD using WF6 and SiH4. (C) 2004 The Electrochemical Society. | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.7, no.9, pp.G195 - G197 | - |
dc.identifier.doi | 10.1149/1.1784053 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.scopusid | 2-s2.0-4944228363 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64177 | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/1.1784053/pdf | - |
dc.identifier.wosid | 000223472300025 | - |
dc.language | 영어 | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Pulsed CVD of tungsten thin film as a nucleation layer for tungsten plug-fill | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Electrochemistry; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
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