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- Kim, Soo-Hyun
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.number | 1 | - |
| dc.citation.startPage | 013707 | - |
| dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
| dc.citation.volume | 107 | - |
| dc.contributor.author | Lee, Do-Joong | - |
| dc.contributor.author | Yim, Sung-Soo | - |
| dc.contributor.author | Kim, Ki-Su | - |
| dc.contributor.author | Kim, Soo-Hyun | - |
| dc.contributor.author | Kim, Ki-Bum | - |
| dc.date.accessioned | 2023-12-22T07:14:18Z | - |
| dc.date.available | 2023-12-22T07:14:18Z | - |
| dc.date.created | 2023-01-05 | - |
| dc.date.issued | 2010-01 | - |
| dc.description.abstract | This paper reports a formation process and electrical properties of a nonvolatile memory structure with atomic layer deposited Ru nanocrystals and a SiO2/Al2O3 bilayered tunnel barrier. Al2O3 tunnel barrier/Ru nanocrystals/Al2O3 blocking barrier were deposited sequentially on a SiO2 2 nm/Si substrate by an in situ atomic layer deposition (ALD) process. Ru nanocrystals grown on the Al2O3 surface for 80 ALD cycles had a spatial density of 2.4x10(12) cm(-2) and an average diameter of 2.6 nm (38% standard deviation in the diameter). Charging/discharging behavior of the Ru nanocrystals embedded in the metal-oxide-semiconductor capacitor structure was examined by programming/erase operations and comprehended in terms of asymmetric barrier height of the bilayered tunnel barrier. The memory structure showed charge retention of 91% and 85% after 10(5) s at room temperature and at 85 degrees C, respectively. | - |
| dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.107, no.1, pp.013707 | - |
| dc.identifier.doi | 10.1063/1.3275346 | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.scopusid | 2-s2.0-75649148190 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64163 | - |
| dc.identifier.url | http://dx.doi.org/10.1063/1.3275346 | - |
| dc.identifier.wosid | 000273689600045 | - |
| dc.language | 영어 | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.title | Nonvolatile memory characteristics of atomic layer deposited Ru nanocrystals with a SiO2/Al2O3 bilayered tunnel barrier | - |
| dc.type | Article | - |
| dc.description.isOpenAccess | FALSE | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.type.docType | Article | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordAuthor | aluminium compounds | - |
| dc.subject.keywordAuthor | atomic layer deposition | - |
| dc.subject.keywordAuthor | MOS capacitors | - |
| dc.subject.keywordAuthor | nanofabrication | - |
| dc.subject.keywordAuthor | nanostructured materials | - |
| dc.subject.keywordAuthor | random-access storage | - |
| dc.subject.keywordAuthor | ruthenium | - |
| dc.subject.keywordAuthor | silicon | - |
| dc.subject.keywordAuthor | silicon compounds | - |
| dc.subject.keywordAuthor | surface charging | - |
| dc.subject.keywordAuthor | tunnelling | - |
| dc.subject.keywordPlus | METAL GATE | - |
| dc.subject.keywordPlus | WORK-FUNCTION | - |
| dc.subject.keywordPlus | DIELECTRICS | - |
| dc.subject.keywordPlus | ELECTRODES | - |
| dc.subject.keywordPlus | DEVICES | - |
| dc.subject.keywordPlus | HFO2 | - |
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