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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 455 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 448 | - |
dc.citation.title | ADVANCED FUNCTIONAL MATERIALS | - |
dc.citation.volume | 21 | - |
dc.contributor.author | Lee, Do-Joong | - |
dc.contributor.author | Kim, Hyun-Mi | - |
dc.contributor.author | Kwon, Jang-Yeon | - |
dc.contributor.author | Choi, Hyoji | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Kim, Ki-Bum | - |
dc.date.accessioned | 2023-12-22T06:36:13Z | - |
dc.date.available | 2023-12-22T06:36:13Z | - |
dc.date.created | 2023-01-05 | - |
dc.date.issued | 2011-02 | - |
dc.description.abstract | Structural and electrical properties of Al-doped ZnO (AZO) films deposited by atomic layer deposition (ALD) are investigated to study the extrinsic doping mechanism of a transparent conducting oxide. ALD-AZO films exhibit a unique layer-by-layer structure consisting of a ZnO matrix and Al2O3 dopant layers, as determined by transmission electron microscopy analysis. In these layered AZO films, a single Al2O3 dopant layer deposited during one ALD cycle could provide approximate to 4.5 x 10(13) cm(-2) free electrons to the ZnO. The effective field model for doping is suggested to explain the decrease in the carrier concentration of ALD-AZO films when the interval between the Al2O3 layers is reduced to less than approximate to 2.6 nm (>3.4 at% Al). By correlating the electrical and structural properties, an extrinsic doping mechanism of ALD-AZO films is proposed in which the incorporated Al atoms take oxygen from the ZnO matrix and form doubly charged donors, such as oxygen vacancies or zinc interstitials. | - |
dc.identifier.bibliographicCitation | ADVANCED FUNCTIONAL MATERIALS, v.21, no.3, pp.448 - 455 | - |
dc.identifier.doi | 10.1002/adfm.201001342 | - |
dc.identifier.issn | 1616-301X | - |
dc.identifier.scopusid | 2-s2.0-79551654826 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64159 | - |
dc.identifier.url | http://dx.doi.org/10.1002/adfm.201001342 | - |
dc.identifier.wosid | 000287045100005 | - |
dc.language | 영어 | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Structural and Electrical Properties of Atomic Layer Deposited Al-Doped ZnO Films | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary;Chemistry, Physical;Nanoscience & Nanotechnology;Materials Science, Multidisciplinary;Physics, AppliedPhysics, Condensed Matter | - |
dc.relation.journalResearchArea | Chemistry;Science & Technology - Other Topics;Materials Science;Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | OXIDE THIN-FILMS | - |
dc.subject.keywordPlus | PULSED-LASER DEPOSITION | - |
dc.subject.keywordPlus | TRANSPARENT CONDUCTING OXIDES | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | SENSITIZED SOLAR-CELLS | - |
dc.subject.keywordPlus | INDIUM-OXIDE | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | SPRAY-PYROLYSIS | - |
dc.subject.keywordPlus | MAGNETIC-FIELD | - |
dc.subject.keywordPlus | GROWTH | - |
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