There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.endPage | D281 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | D277 | - |
dc.citation.title | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.volume | 158 | - |
dc.contributor.author | Lee, Do-Joong | - |
dc.contributor.author | Kwon, Jang-Yeon | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Kim, Hyun-Mi | - |
dc.contributor.author | Kim, Ki-Bum | - |
dc.date.accessioned | 2023-12-22T06:14:01Z | - |
dc.date.available | 2023-12-22T06:14:01Z | - |
dc.date.created | 2023-01-05 | - |
dc.date.issued | 2011-03 | - |
dc.description.abstract | The effect of the Al distribution on the electrical properties of Al-doped ZnO (AZO) films deposited by atomic layer deposition (ALD) is investigated. In order to control the Al distribution, the pulsing time of trimethylaluminum (TMA) is varied from 2 (within an ALD window) to 0.1 s. As a result, the areal density of Al atoms incorporated in a single dopant layer decreases from 3.3 x 10(14) to 1.2 x 10(14) cm(-2). Hall measurements reveal that the minimum resistivity of the ALD-AZO films is decreased from 3.2 x 10(-3) to 1.7 x10(-3) Omega cm as a result of reducing the TMA pulsing time from 2 to 0.1 s. This decrease is due to the obvious increase of the carrier concentration from 1.4 x 10(20) to 4.7 x 10(20) cm(-3). It is suggested that both the improved doping efficiency (from 13 to 58%) and the insertion of more dopant layers within the ZnO matrix are responsible for the increase of the carrier concentration. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3568881] All rights reserved. | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.5, pp.D277 - D281 | - |
dc.identifier.doi | 10.1149/1.3568881 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.scopusid | 2-s2.0-79953182343 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64157 | - |
dc.identifier.url | http://dx.doi.org/10.1149/1.3568881 | - |
dc.identifier.wosid | 000288867700060 | - |
dc.language | 영어 | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Effect of Al Distribution on Carrier Generation of Atomic Layer Deposited Al-Doped ZnO Films | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry; Materials Science, Coatings & Films | - |
dc.relation.journalResearchArea | Electrochemistry; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | OXIDE THIN-FILMS | - |
dc.subject.keywordPlus | GROWTH | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.