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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | D93 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | D89 | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 14 | - |
dc.contributor.author | Kim, Tae-Ho | - |
dc.contributor.author | Eom, Tae-Kwang | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Kang, Dae-Hwan | - |
dc.contributor.author | Kim, Hoon | - |
dc.contributor.author | Yu, Sangho | - |
dc.contributor.author | Lim, Jin Mook | - |
dc.date.accessioned | 2023-12-22T06:09:52Z | - |
dc.date.available | 2023-12-22T06:09:52Z | - |
dc.date.created | 2023-01-30 | - |
dc.date.issued | 2011-05 | - |
dc.description.abstract | TaCx films were deposited by plasma-enhanced atomic layer deposition (PEALD) at a wafer temperature of 300 degrees C using a novel nitrogen-free Ta precursor, tris(neopentyl) tantalum dichloride, Ta[CH2C(CH3)(3)](3)Cl-2 and H-2 plasma as the reactant. Self-limiting film growth was observed with both the precursor and reactant pulsing time. Both X-ray diffraction and electron diffraction analysis consistently showed that a cubic TaC phase formed, even though the film was Ta-rich TaCx (C/Ta = similar to 0.36). The film resistivity decreased with increasing H-2 plasma pulsing time from 900 to 375 mu Omega cm. In this study, a performance of TaCx as a diffusion barrier for Cu interconnects was evaluated. The results showed that the structure of Cu (100 nm)/ALD-TaCx (15 nm)/Si was stable after annealing at 650 degrees C for 30 min. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3594747] All rights reserved. | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.14, no.8, pp.D89 - D93 | - |
dc.identifier.doi | 10.1149/1.3594747 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.scopusid | 2-s2.0-79959247199 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64153 | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/1.3594747 | - |
dc.identifier.wosid | 000291407500008 | - |
dc.language | 영어 | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Plasma-Enhanced Atomic Layer Deposition of TaCx Films Using Tris(neopentyl) Tantalum Dichloride and H-2 Plasma | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Electrochemistry; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | electron diffraction | - |
dc.subject.keywordAuthor | MIS structures | - |
dc.subject.keywordAuthor | plasma deposition | - |
dc.subject.keywordAuthor | tantalum compounds | - |
dc.subject.keywordAuthor | thin films | - |
dc.subject.keywordAuthor | X-ray diffraction | - |
dc.subject.keywordAuthor | annealing | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | copper | - |
dc.subject.keywordAuthor | diffusion barriers | - |
dc.subject.keywordAuthor | electrical resistivity | - |
dc.subject.keywordPlus | TAN THIN-FILMS | - |
dc.subject.keywordPlus | DIFFUSION BARRIER | - |
dc.subject.keywordPlus | DIETHYLAMIDO-TANTALUM | - |
dc.subject.keywordPlus | CU | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | COPPER | - |
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