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Jeong, Hu Young
UNIST Central Research Facilities (UCRF)
Research Interests
  • Soft material characterization such as graphene using a low kV Cs-corrected TEM

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Laser-induced solid-phase doped graphene

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Title
Laser-induced solid-phase doped graphene
Author
Jeong, Hu YoungChoi, InsungJung, Dae YoolByun, MyunghwanChoi, Choon-GiHong, Byung HeeChoi, Sung-YoolLee, Keon Jae
Keywords
laser; nitrogen-doped graphene; silicon carbide; solid-phase synthesis
Issue Date
2014
Publisher
AMER CHEMICAL SOC
Citation
ACS NANO, v.8, no.8, pp.7671 - 7677
Abstract
There have been numerous efforts to improve the performance of graphene-based electronic devices by chemical doping. Most studies have focused on gas-phase doping with chemical vapor deposition. However, that requires a complicated transfer process that causes undesired doping and defects by residual polymers. Here, we report a solid-phase synthesis of doped graphene by means of silicon carbide (SiC) substrate including a dopant source driven by pulsed laser irradiation. This method provides in situ direct growth of doped graphene on an insulating SiC substrate without a transfer step. A numerical simulation on the temperature history of the SiC surface during laser irradiation reveals that the surface temperature of SiC can be accurately controlled to grow nitrogen-doped graphene from the thermal decomposition of nitrogen-doped SiC. Laser-induced solid-phase doped graphene is highly promising for the realization of graphene-based nanoelectronics with desired functionalities.
URI
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DOI
http://dx.doi.org/10.1021/nn5032214
ISSN
1936-0851
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