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DC Field | Value | Language |
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dc.citation.endPage | 526 | - |
dc.citation.number | 1439 | - |
dc.citation.startPage | 523 | - |
dc.citation.title | JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | - |
dc.citation.volume | 123 | - |
dc.contributor.author | Tang, Hao-Chun | - |
dc.contributor.author | Kim, Junghwan | - |
dc.contributor.author | Hiramatsu, Hidenori | - |
dc.contributor.author | Hosono, Hideo | - |
dc.contributor.author | Kamiya, Toshio | - |
dc.date.accessioned | 2023-12-22T01:06:51Z | - |
dc.date.available | 2023-12-22T01:06:51Z | - |
dc.date.created | 2023-02-14 | - |
dc.date.issued | 2015-07 | - |
dc.description.abstract | Growth of amorphous ZnO by B doping and their opto-electrical properties are reported. The B-doped ZnO (ZnO:B) films were grown by pulsed laser deposition using polycrystalline ZnO:B ceramic targets. Although the solubility limit of B in bulk ZnO polycrystal was similar to 4%, 18%-doped ZnO:B showed the shrinkage in the c-axis length. Preferentially (002)-oriented polycrystalline ZnO:B films were grown for the B concentration [B] <= 18%; while, amorphous ZnO:B films were obtained for [B] similar to 26%. It was found that the density of the amorphous ZnO:B film was smaller by 9% than that of crystalline ZnO (5.61 g.cm(-3)), which is explained mainly by the incorporation of the light B atoms. The optical bandgap of the ZnO:B films increased with [B] and that of the amorphous ZnO:B film was similar to 3.38 eV. The amorphous ZnO:B films have low free electron density of similar to 10(15) cm(-3), suggesting the existence of electron traps. Hall mobility of the amorphous ZnO:B [similar to 1 cm(2)(V.s)(-1)] was smaller than those of the polycrystalline ZnO:B films. (C) 2015 The Ceramic Society of Japan. All rights reserved. | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, v.123, no.1439, pp.523 - 526 | - |
dc.identifier.doi | 10.2109/jcersj2.123.523 | - |
dc.identifier.issn | 1882-0743 | - |
dc.identifier.scopusid | 2-s2.0-84934763293 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/62122 | - |
dc.identifier.wosid | 000362502300003 | - |
dc.language | 영어 | - |
dc.publisher | CERAMIC SOC JAPAN-NIPPON SERAMIKKUSU KYOKAI | - |
dc.title | Fabrication and opto-electrical properties of amorphous (Zn, B) O thin film by pulsed laser deposition | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Amorphous oxide semiconductor | - |
dc.subject.keywordAuthor | Boron-doped ZnO | - |
dc.subject.keywordAuthor | Pulsed laser deposition | - |
dc.subject.keywordPlus | OXIDE SEMICONDUCTORS | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | DEFECTS | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | SILICON | - |
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