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DC Field | Value | Language |
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dc.citation.number | 5 | - |
dc.citation.startPage | 1800198 | - |
dc.citation.title | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.citation.volume | 216 | - |
dc.contributor.author | Ide, Keisuke | - |
dc.contributor.author | Futakado, Yuki | - |
dc.contributor.author | Watanabe, Naoto | - |
dc.contributor.author | Kim, Junghwan | - |
dc.contributor.author | Katase, Takayoshi | - |
dc.contributor.author | Hiramatsu, Hidenori | - |
dc.contributor.author | Hosono, Hideo | - |
dc.contributor.author | Kamiya, Toshio | - |
dc.date.accessioned | 2023-12-21T19:17:15Z | - |
dc.date.available | 2023-12-21T19:17:15Z | - |
dc.date.created | 2023-02-14 | - |
dc.date.issued | 2019-03 | - |
dc.description.abstract | Transition metal (TM)-doped amorphous gallium oxide (a-GO:TMx) is studied as an inorganic thin-film phosphor. Cr is selected as an emission center based on preliminary screening. The most intense red photoluminescence (PL) with a broad emission band of 620-800 nm from the a-GO:Cr-x films deposited at room temperature is attained by optimizing the Cr concentration (x = 0.001) and the oxygen partial pressure (P-O2 = 10 Pa) during the film growth. Post-deposition thermal annealing at 400 degrees C in O-2, which is lower than the crystallization temperature, improves internal quantum efficiency (IQE) of PL to 0.3%. Crystallized films by 800 degrees C annealing further improves the IQE to 20%. The improvement of PL by crystallization is commonly observed for conventional inorganic phosphors, but opposite to that of previously reported rare-earth (RE)-doped a-GO:REx thin-film phosphors. It is explained by different solubility of Cr and RE in the beta-Ga2O3 host. | - |
dc.identifier.bibliographicCitation | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.216, no.5, pp.1800198 | - |
dc.identifier.doi | 10.1002/pssa.201800198 | - |
dc.identifier.issn | 1862-6300 | - |
dc.identifier.scopusid | 2-s2.0-85052390733 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/62093 | - |
dc.identifier.wosid | 000460416600005 | - |
dc.language | 영어 | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Transition Metal-Doped Amorphous Oxide Semiconductor Thin-Film Phosphor, Chromium-Doped Amorphous Gallium Oxide | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Materials Science; Physics | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | amorphous gallium oxide | - |
dc.subject.keywordAuthor | amorphous oxide semiconductors | - |
dc.subject.keywordAuthor | rare-earth free | - |
dc.subject.keywordAuthor | thin-film phosphor | - |
dc.subject.keywordAuthor | transition metal | - |
dc.subject.keywordPlus | CR3+ IONS | - |
dc.subject.keywordPlus | LUMINESCENCE | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | OLEDS | - |
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