There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.number | 9 | - |
dc.citation.startPage | 2002193 | - |
dc.citation.title | ADVANCED MATERIALS INTERFACES | - |
dc.citation.volume | 8 | - |
dc.contributor.author | Liu, Xianzhe | - |
dc.contributor.author | Zhang, Jianhua | - |
dc.contributor.author | Shiah, Yu-Shien | - |
dc.contributor.author | Kim, Junghwan | - |
dc.contributor.author | Ning, Honglong | - |
dc.contributor.author | Lu, Kuankuan | - |
dc.contributor.author | Cao, Xiuhua | - |
dc.contributor.author | Xu, Wei | - |
dc.contributor.author | Yao, Rihui | - |
dc.contributor.author | Peng, Junbiao | - |
dc.date.accessioned | 2023-12-21T15:46:03Z | - |
dc.date.available | 2023-12-21T15:46:03Z | - |
dc.date.created | 2023-02-14 | - |
dc.date.issued | 2021-05 | - |
dc.description.abstract | Recently, amorphous oxide semiconductors (AOSs) have attracted much attention owing to their various advantages. The intrinsic nature of AOSs enables to achieve high-performance thin-film transistors (TFTs) using low-temperature process, which would be a strong point for next-generation flexible electronics. However, most AOS TFTs still require postannealing treatments (>300 degrees C) for structural relaxation to suppress defects, which lead to the issue of thermal resistance of plastic substrates. Therefore, a strategy for obtaining both low-temperature process and defect suppression is highly demanded for flexible electronics. To solve the former issue, a Sn-Si-O system is proposed in this paper. It is clarified that Si cations play the roles of amorphousizing SnO2 and suppressing carrier concentration. As a result, room-temperature fabricable flexible Sn-Si-O TFTs with high mobility and high reliability are demonstrated. It is also suggested that obtaining a rigid film structure is quite important to fabricate high performance TFTs without any further postannealing treatment. The obtained saturation mobility (mu(sat)) and on/off ratio are 7.59 cm(2) V-1 s(-1) and 1.59 x 10(7), respectively. This work suggests that amorphous Si doped SnO2 has the potential for the application to the flexible driving backplane in display industry. | - |
dc.identifier.bibliographicCitation | ADVANCED MATERIALS INTERFACES, v.8, no.9, pp.2002193 | - |
dc.identifier.doi | 10.1002/admi.202002193 | - |
dc.identifier.scopusid | 2-s2.0-85101849845 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/62074 | - |
dc.identifier.wosid | 000623167500001 | - |
dc.language | 영어 | - |
dc.publisher | WILEY | - |
dc.title | Implementing Room-Temperature Fabrication of Flexible Amorphous Sn-Si-O TFTs via Defect Control | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | annealing‐ | - |
dc.subject.keywordAuthor | free treatment | - |
dc.subject.keywordAuthor | flexible electronics | - |
dc.subject.keywordAuthor | silicon doped tin oxide | - |
dc.subject.keywordAuthor | thin film transistors | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.