Highly manufacturable high density phase change memory of 64Mb and beyond

Abstract

Highly manufacturable 64Mbit PRAM has been successfully fabricated using N-doped Ge2Sb2Te5(GST) and optimal GST etching process. Using those technologies, it was possible to achieve the low writing current of 0.6mA and clear separation between SET and RESET resistance distributions. The 64Mb PRAM was designed to support commercial NOR Flash memory compatible interfaces. Therefore, the fabricated chip was tested under the mobile application platform and its functionality and reliability has been evaluated by operation temperature dependency, disturbance, endurance, and retention. Finally, it was clearly demonstrated that high density PRAM can be fabricated in the product level with strong reliability to produce new non-volatile memory markets. ©2004 IEEE.