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DC Field | Value | Language |
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dc.citation.conferencePlace | US | - |
dc.citation.conferencePlace | Washington, DC | - |
dc.citation.endPage | 12.2.4 | - |
dc.citation.startPage | 12.2.1 | - |
dc.citation.title | 2013 IEEE International Electron Devices Meeting | - |
dc.contributor.author | Jeong, Changwook | - |
dc.contributor.author | Park, H.-H. | - |
dc.contributor.author | Dhar, S. | - |
dc.contributor.author | Park, S. | - |
dc.contributor.author | Lee, K. | - |
dc.contributor.author | Jin, S. | - |
dc.contributor.author | Choi, W. | - |
dc.contributor.author | Kwon, U.-H. | - |
dc.contributor.author | Lee, K.-H. | - |
dc.contributor.author | Park, Y. | - |
dc.date.accessioned | 2023-12-20T00:36:19Z | - |
dc.date.available | 2023-12-20T00:36:19Z | - |
dc.date.created | 2022-04-06 | - |
dc.date.issued | 2013-12-09 | - |
dc.description.abstract | For devices beyond the 14nm node, it is important to investigate performance boosters such as high mobility channels. Although pure Ge offers a higher hole mobility than Si, conventional problems like surface passivation and its integration with Si makes SiGe alloy with low Ge mole fraction a viable option. The significance of alloy scattering, however, has been widely debated [1-3], so the accurate modeling of alloy scattering in SiGe channel has become an important issue to predict the performance of future SiGe-based FETs. Usually, the calculation of alloy scattering mobility assumes an alloy scattering center in a simple analytical form with some fitting parameters, which is a good practical approach but has a limited predictability. In this paper, an atomistic tight-binding simulation is used to study alloy scattering in SiGe-based FETs, and to compare with experimental data. We conclude (i) although it is essentially impossible to avoid alloy scattering in SiGe material, (ii) high-mobility is indeed achieved in SiGe channel by combining lattice-mismatch stresses from Si virtual substrate with stresses from Source/Drain(SD) stressor. © 2013 IEEE. | - |
dc.identifier.bibliographicCitation | 2013 IEEE International Electron Devices Meeting, pp.12.2.1 - 12.2.4 | - |
dc.identifier.doi | 10.1109/IEDM.2013.6724614 | - |
dc.identifier.issn | 0163-1918 | - |
dc.identifier.scopusid | 2-s2.0-84894380930 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/58526 | - |
dc.language | 영어 | - |
dc.publisher | IEEE | - |
dc.title | Physical understanding of alloy scattering in SiGe channel for high-performance strained pFETs | - |
dc.type | Conference Paper | - |
dc.date.conferenceDate | 2013-12-09 | - |
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