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Jeong, Changwook
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dc.citation.number 2 -
dc.citation.title JOURNAL OF APPLIED PHYSICS -
dc.citation.volume 107 -
dc.contributor.author Jeong, Changwook -
dc.contributor.author Kim, Raseong -
dc.contributor.author Luisier, Mathieu -
dc.contributor.author Datta, Supriyo -
dc.contributor.author Lundstrom, Mark -
dc.date.accessioned 2023-12-22T07:14:20Z -
dc.date.available 2023-12-22T07:14:20Z -
dc.date.created 2022-04-01 -
dc.date.issued 2010-01 -
dc.description.abstract Using a full band description of electronic bandstructure, the Landauer approach to diffusive transport is mathematically related to the solution of the Boltzmann transport equation, and expressions for the thermoelectric parameters in both formalisms are presented. Quantum mechanical and semiclassical techniques to obtain from a full description of the bandstructure, E(k), the density of modes in the Landauer approach or the transport distribution in the Boltzmann solution are compared and thermoelectric transport coefficients are evaluated. Several example calculations for representative bulk materials are presented and the full band results are related to the more common effective mass formalism. Finally, given a full E(k) for a crystal, a procedure to extract an accurate, effective mass level description is presented. -
dc.identifier.bibliographicCitation JOURNAL OF APPLIED PHYSICS, v.107, no.2 -
dc.identifier.doi 10.1063/1.3291120 -
dc.identifier.issn 0021-8979 -
dc.identifier.scopusid 2-s2.0-75749116799 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/58480 -
dc.identifier.wosid 000274180600060 -
dc.language 영어 -
dc.publisher AMER INST PHYSICS -
dc.title On Landauer versus Boltzmann and full band versus effective mass evaluation of thermoelectric transport coefficients -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Physics, Applied -
dc.relation.journalResearchArea Physics -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor band structure -
dc.subject.keywordAuthor bismuth compounds -
dc.subject.keywordAuthor Boltzmann equation -
dc.subject.keywordAuthor diffusion -
dc.subject.keywordAuthor effective mass -
dc.subject.keywordAuthor elemental semiconductors -
dc.subject.keywordAuthor gallium arsenide -
dc.subject.keywordAuthor germanium -
dc.subject.keywordAuthor III-V semiconductors -
dc.subject.keywordAuthor thermoelectricity -
dc.subject.keywordPlus ELECTRONIC-STRUCTURE -
dc.subject.keywordPlus BISMUTH TELLURIDE -
dc.subject.keywordPlus HIGH FIGURE -
dc.subject.keywordPlus MERIT -
dc.subject.keywordPlus DESIGN -
dc.subject.keywordPlus SUPERLATTICES -
dc.subject.keywordPlus THERMOPOWER -

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