BROWSE

Related Researcher

Author

Kim, Kwang S.
Center for Superfunctional Materials (CSM)
Research Interests
  • Theoretical/experimental nanosciences, molecular electronics spectroscopy, energy materials

ITEM VIEW & DOWNLOAD

Self-organizing properties of triethylsilylethynyl-anthradithiophene on monolayer graphene electrodes in solution-processed transistors

Cited 7 times inthomson ciCited 4 times inthomson ci
Title
Self-organizing properties of triethylsilylethynyl-anthradithiophene on monolayer graphene electrodes in solution-processed transistors
Author
Jang, JaeyoungPark, JaesungNam, SoojiAnthony, John E.Kim, YoungsooKim, Keun SooKim, Kwang S.Hong, Byung HeePark, Chan Eon
Keywords
Device performance; Electrode material; Good compatibility; Graphene electrodes; Molecular assembly; Organic electronic devices; Solution-processed; Source/drain electrodes
Issue Date
2013
Publisher
ROYAL SOC CHEMISTRY
Citation
NANOSCALE, v.5, no.22, pp.11094 - 11101
Abstract
Graphene has shown great potential as an electrode material for organic electronic devices such as organic field-effect transistors (FETs) because of its high conductivity, thinness, and good compatibility with organic semiconductor materials. To achieve high performance in graphene-based organic FETs, favorable molecular orientation and good crystallinity of organic semiconductors on graphene are desired. This strongly depends on the surface properties of graphene. Here, we investigate the effects of polymer residues that remain on graphene source/drain electrodes after the transfer/patterning processes on the self-organizing properties and field-effect characteristics of the overlying solution-processed triethylsilylethynyl-anthradithiophene (TES-ADT). A solvent-assisted polymer residue removal process was introduced to effectively remove residues or impurities on the graphene surface. Unlike vacuum-deposited small molecules, TES-ADT displayed a standing-up molecular assembly, which facilitates lateral charge transport, on both the residue-removed clean graphene and as-transferred graphene with polymer residues. However, TES-ADT films grown on the cleaned graphene showed a higher crystallinity and larger grain size than those on the as-transferred graphene. The resulting TES-ADT FETs using cleaned graphene source/drain electrodes therefore exhibited a superior device performance compared to devices using as-transferred graphene electrodes, with mobilities as high as 1.38 cm 2 V-1 s-1
URI
Go to Link
DOI
http://dx.doi.org/10.1039/c3nr03356b
ISSN
2040-3364
Appears in Collections:
SNS_Journal Papers

find_unist can give you direct access to the published full text of this article. (UNISTARs only)

Show full item record

qr_code

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

MENU