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김대식

Kim, Dai-Sik
Nano Optics Group
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PHONON TEMPERATURE OVERSHOOT IN GAAS EXCITED BY SUBPICOSECOND LASER-PULSES

Author(s)
KIM, DSYU, PY
Issued Date
1990-02
DOI
10.1103/PhysRevLett.64.946
URI
https://scholarworks.unist.ac.kr/handle/201301/54728
Fulltext
https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.64.946
Citation
PHYSICAL REVIEW LETTERS, v.64, no.8, pp.946 - 949
Abstract
Hot electrons and phonons excited in GaAs by subpicosecond laser pulses have been studied by inelastic light scattering for photoexcited electron densities varying between 1017 and 1019cm−3. Transient overshoot of longitudinal-optical (LO) phonon temperature above the electron temperature has been observed. This is explained by the fast production of zone-center LO phonons by hot electrons combined with slower reabsorption of the emitted phonons due to rapid cooling of Γ valley electrons by intervalley scattering.
Publisher
AMER PHYSICAL SOC
ISSN
0031-9007

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