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김대식

Kim, Dai-Sik
Nano Optics Group
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SUBPICOSECOND COOLING OF PHOTOEXCITED HOT CARRIERS STUDIED BY ONE-BEAM EXCITE-AND-PROBE RAMAN-SCATTERING

Author(s)
KIM, DSYU, PY
Issued Date
1990-05
DOI
10.1063/1.102969
URI
https://scholarworks.unist.ac.kr/handle/201301/54725
Fulltext
https://aip.scitation.org/doi/10.1063/1.102969
Citation
APPLIED PHYSICS LETTERS, v.56, no.22, pp.2210 - 2212
Abstract
A technique using a single picosecond laser beam to excite and probe photoexcited hot electron and hole plasma by inelastic light scattering is proposed. The cooling rate of the hot electrons is determined by varying the pulse width of the laser beam. The technique is illustrated by measuring the subpicosecond cooling of hot carriers in GaAs and InGaAs. The advantages and limitations of the technique are discussed.
Publisher
AMER INST PHYSICS
ISSN
0003-6951

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