There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.number | 3 | - |
dc.citation.startPage | 035334 | - |
dc.citation.title | PHYSICAL REVIEW B | - |
dc.citation.volume | 66 | - |
dc.contributor.author | Jho, YD | - |
dc.contributor.author | Yahng, JS | - |
dc.contributor.author | Oh, E | - |
dc.contributor.author | Kim, DS | - |
dc.date.accessioned | 2023-12-22T11:37:24Z | - |
dc.date.available | 2023-12-22T11:37:24Z | - |
dc.date.created | 2021-10-22 | - |
dc.date.issued | 2002-07 | - |
dc.description.abstract | We have studied the effects of an external electric field on photoluminescence spectra and carrier lifetimes in strained InxGa1-xN/GaN quantum wells embedded in p-i-n light-emitting diode (LED) structures. Two sample structures with x=0.15 for blue LED's and 0.2 for green LED's have been investigated, with increasing reverse bias up to -30 V. From spectrum-resolved photoluminescence, we observed region of blueshift and redshift in photoluminescence peak energies. From the energy shift, the strength of piezoelectric field was estimated to be 2.1+/-0.2 MV/cm. Within our bias range, we observed three orders and one order of magnitude changes in carrier lifetime, for blue and green LED's, respectively. These time-domain results are explained by escape tunneling and thermionic emission, together with carrier recombination which depends on the electron-hole wave function overlap change. | - |
dc.identifier.bibliographicCitation | PHYSICAL REVIEW B, v.66, no.3, pp.035334 | - |
dc.identifier.doi | 10.1103/PhysRevB.66.035334 | - |
dc.identifier.issn | 2469-9950 | - |
dc.identifier.scopusid | 2-s2.0-33644575621 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/54650 | - |
dc.identifier.url | https://journals.aps.org/prb/abstract/10.1103/PhysRevB.66.035334 | - |
dc.identifier.wosid | 000177338500096 | - |
dc.language | 영어 | - |
dc.publisher | AMER PHYSICAL SOC | - |
dc.title | Field-dependent carrier decay dynamics in strained InxGa1-xN/GaN quantum wells | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | TIME-RESOLVED PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | ELECTRIC-FIELD | - |
dc.subject.keywordPlus | PIEZOELECTRIC FIELDS | - |
dc.subject.keywordPlus | INGAN SINGLE | - |
dc.subject.keywordPlus | 2-DIMENSIONAL EXCITONS | - |
dc.subject.keywordPlus | LIFETIME ENHANCEMENT | - |
dc.subject.keywordPlus | THERMIONIC EMISSION | - |
dc.subject.keywordPlus | OPTICAL-ABSORPTION | - |
dc.subject.keywordPlus | TUNNELING TIMES | - |
dc.subject.keywordPlus | BAND-GAP | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.