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- Kim, Dai-Sik
- Nano Optics Group
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Time-resolved differential reflection measurements on Ga1-xMnxAs
- Author(s)
- Kim, Shin, Oh, Eunsoon, Lee, J. U., Kim, D. S., Lee, S, Furdyna, JK
- Issued Date
- 2006-10
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.49, no.4, pp.1611 - 1614
- Abstract
- We measured the time-resolved differential reflectivity, Delta R, of Ga1-xMnxAs for x <= 0.05 for various excitation wavelengths and compared with the signals from semi-insulating GaAs substrates. The sign of AR from Ga1-xMnxAs (x = 0.015 and x = 0.03) was negative at 295 K for photon energies larger than bandgap, which was ascribed to defect-induced absorption or a reduction of exciton bleaching. We also discuss the screening of Mn alloy potential fluctuations by photocarriers in the time-resolved differential reflection of Ga1-xMnxAs.
- Publisher
- KOREAN PHYSICAL SOC
- ISSN
- 0374-4884
- Keyword (Author)
- GaMnAs, pump-probe, time-resolved reflectivity
- Keyword
- MOLECULAR-BEAM EPITAXY, GAAS, TEMPERATURE, GAMNAS
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