dc.citation.conferencePlace |
US |
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dc.citation.conferencePlace |
Los Angeles, California |
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dc.citation.title |
APS March Meeting |
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dc.contributor.author |
Ge, Ruijing |
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dc.contributor.author |
Wu, Xiaohan |
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dc.contributor.author |
Kim, Myungsoo |
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dc.contributor.author |
Lee, Jack |
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dc.contributor.author |
Akinwande, Deji |
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dc.date.accessioned |
2023-12-19T17:36:48Z |
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dc.date.available |
2023-12-19T17:36:48Z |
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dc.date.created |
2021-09-08 |
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dc.date.issued |
2018-03-07 |
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dc.description.abstract |
We have observed non-volatile resistance switching (NVRS) phenomenon in non-metallic single-layer atomic sheets in a vertical device configuration. Results suggest a rich multi-physics effect persistent in both poly- and single- crystalline atomic sheets below 1nm thickness. NVRS is observed in several TMDs including MoS2, MoSe2, WSe2, and WS2 and also in h-BN. This alludes to a universal effect in non-metallic 2D materials. Our findings overturn the contemporary thinking that non-volatile switching is not scalable below a few nanometers. Emerging concepts in non-volatile flexible memory fabrics, zero static power radio-frequency switches, and brain-inspired (neuromorphic) computing could benefit substantially from the pervasive NVRS effect in atomic sheets. Experimentally results for RF switching have been achieved. |
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dc.identifier.bibliographicCitation |
APS March Meeting |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/53922 |
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dc.identifier.url |
http://meetings.aps.org/Meeting/MAR18/Session/P37.4 |
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dc.publisher |
American Physical Society |
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dc.title |
Universal Non-Volatile Resistance Switching Phenomenon in Atomic Monolayers |
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dc.type |
Conference Paper |
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dc.date.conferenceDate |
2018-03-05 |
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