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DC Field | Value | Language |
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dc.citation.number | 23 | - |
dc.citation.startPage | 2100066 | - |
dc.citation.title | ADVANCED MATERIALS | - |
dc.citation.volume | 33 | - |
dc.contributor.author | Jo, Seungki | - |
dc.contributor.author | Cho, Soyoung | - |
dc.contributor.author | Yang, U. Jeong | - |
dc.contributor.author | Hwang, Gyeong-Seok | - |
dc.contributor.author | Baek, Seongheon | - |
dc.contributor.author | Kim, Si-Hoon | - |
dc.contributor.author | Heo, Seung Hwae | - |
dc.contributor.author | Kim, Ju-Young | - |
dc.contributor.author | Choi, Moon Kee | - |
dc.contributor.author | Son, Jae Sung | - |
dc.date.accessioned | 2023-12-21T15:45:04Z | - |
dc.date.available | 2023-12-21T15:45:04Z | - |
dc.date.created | 2021-05-13 | - |
dc.date.issued | 2021-06 | - |
dc.description.abstract | Compared with the large plastic deformation observed in ductile metals and organic materials, inorganic semiconductors have limited plasticity (<0.2%) due to their intrinsic bonding characters, restricting their widespread applications in stretchable electronics. Herein, the solution-processed synthesis of ductile alpha-Ag2S thin films and fabrication of all-inorganic, self-powered, and stretchable memory devices, is reported. Molecular Ag2S complex solution is synthesized by chemical reduction of Ag2S powder, fabricating wafer-scale highly crystalline Ag2S thin films. The thin films show stretchability due to the intrinsic ductility, sustaining the structural integrity at a tensile strain of 14.9%. Moreover, the fabricated Ag2S-based resistive random access memory presents outstanding bipolar switching characteristics (I-on/I-off ratio of approximate to 10(5), operational endurance of 100 cycles, and retention time >10(6) s) as well as excellent mechanical stretchability (no degradation of properties up to stretchability of 52%). Meanwhile, the device is highly durable under diverse chemical environments and temperatures from -196 to 300 degrees C, especially maintaining the properties for 168 h in 85% relative humidity and 85 degrees C. A self-powered memory combined with motion sensors for use as a wearable healthcare monitoring system is demonstrated, offering the potential for designing high-performance wearable electronics that are usable in daily life in a real-world setting. | - |
dc.identifier.bibliographicCitation | ADVANCED MATERIALS, v.33, no.23, pp.2100066 | - |
dc.identifier.doi | 10.1002/adma.202100066 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.scopusid | 2-s2.0-85105148149 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/52881 | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/adma.202100066 | - |
dc.identifier.wosid | 000645569800001 | - |
dc.language | 영어 | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Solution-Processed Stretchable Ag2S Semiconductor Thin Films for Wearable Self-Powered Nonvolatile Memory | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
dc.type.docType | Article; Early Access | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Ag | - |
dc.subject.keywordAuthor | S-2 | - |
dc.subject.keywordAuthor | healthcare monitoring | - |
dc.subject.keywordAuthor | thin films | - |
dc.subject.keywordAuthor | resistive switching | - |
dc.subject.keywordAuthor | solution processing | - |
dc.subject.keywordAuthor | stretchable devices | - |
dc.subject.keywordAuthor | stretchable semiconductors | - |
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