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김진영

Kim, Jin Young
Next Generation Energy Lab.
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dc.citation.conferencePlace US -
dc.citation.conferencePlace San Diego, CA; USA -
dc.citation.title Organic Field-Effect Transistors V -
dc.contributor.author Cho, S. -
dc.contributor.author Yuen, J. -
dc.contributor.author Kim, Jin Young -
dc.contributor.author Lee, K. -
dc.contributor.author Heeger, A.J. -
dc.date.accessioned 2023-12-20T05:08:15Z -
dc.date.available 2023-12-20T05:08:15Z -
dc.date.created 2014-12-23 -
dc.date.issued 2006-08-13 -
dc.description.abstract Polymer field-effect transistors with a field-effect mobility of μ≈0.3 cm 2V·s have been demonstrated using regioregular poly(3-hexylthiophene) (rr-P3HT). Devices were fabricated by dip-coating the semiconducting polymer followed by annealing at 150°C for 10 minutes. The heat annealed devices exhibit an increased field-effect mobility compared with the as-prepared devices. Morphology studies and analysis of the channel resistance demonstrate that the annealing process increases the crystallinity of rr-P3HT and improves the contact between the electrodes and the P3HT films, thereby increasing the field effect mobility of the films. Based on the results obtained from unipolar FETs using rr-P3HT, we have also applied postproduction heat treatment to ambipolar polymer FETs fabricated with rr-P3HT and C 61-butyric acid methyl ester (PCBM). Devices were fabricated using aluminum (Al) source and drain electrodes to achieve an equivalent injection for the both holes and electrons. As the case of P3HT unipolar FETs, the thermal annealing method also improves the film morphology, crystallinity, and the contact properties between Al and active layer, thereby resulting in excellent ambipolar characteristics with the hole mobility of 1.7×10 -3 cm 2/V·s and the electron mobility of 2.0×10 -3 cm 2V·s. -
dc.identifier.bibliographicCitation Organic Field-Effect Transistors V -
dc.identifier.doi 10.1117/12.681026 -
dc.identifier.isbn 0819464155;978-08194 -
dc.identifier.issn 0277-786X -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/51935 -
dc.publisher SPIE -
dc.title Thermal annealing induced enhancement in the performance of polymer field-effect transistor using poly(3-hexylthiophene) and [6,6]-phenyl C61-butyric acid methyl ester -
dc.type Conference Paper -
dc.date.conferenceDate 2006-08-13 -

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