dc.citation.conferencePlace |
US |
- |
dc.citation.conferencePlace |
Santa Barbara, CA, USA |
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dc.citation.endPage |
141 |
- |
dc.citation.startPage |
140 |
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dc.citation.title |
57th Annual Device Research Conference Digest |
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dc.contributor.author |
Chae, Dong-Hyuk |
- |
dc.contributor.author |
Yoon, Tae-Sik |
- |
dc.contributor.author |
Kim, Dae Hwan |
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dc.contributor.author |
Kwon, Jang-Yeon |
- |
dc.contributor.author |
Kim, Ki-Bum |
- |
dc.contributor.author |
Lee, Jong Duk |
- |
dc.contributor.author |
Park, Byung-Gook |
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dc.date.accessioned |
2023-12-20T06:38:16Z |
- |
dc.date.available |
2023-12-20T06:38:16Z |
- |
dc.date.created |
2021-03-23 |
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dc.date.issued |
1999-06-30 |
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dc.description.abstract |
A single electron memory cell is fabricated using SiGe nanocrystal array and multilevel programming characteristics due to the Coulomb blockade effect. Time-resolved programming characteristics showed a collective behavior in which electrons are charged one-by-one per nanocrystal. Reduction of tunneling rate in the course of the programming process is explained by an interaction due to capacitive coupling among closely spaced nanocrystals. |
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dc.identifier.bibliographicCitation |
57th Annual Device Research Conference Digest , pp.140 - 141 |
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dc.identifier.scopusid |
2-s2.0-0033362264 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/50720 |
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dc.language |
영어 |
- |
dc.publisher |
IEEE, Piscataway, NJ, United States |
- |
dc.title |
Programming dynamics of a single electron memory cell with a high-density SiGe nanocrystal array at room temperature |
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dc.type |
Conference Paper |
- |
dc.date.conferenceDate |
1999-06-28 |
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