dc.citation.conferencePlace |
US |
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dc.citation.conferencePlace |
Las Vegas, NV |
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dc.citation.endPage |
299 |
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dc.citation.startPage |
295 |
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dc.citation.title |
218th ECS Meeting |
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dc.contributor.author |
Kim, B.-J. |
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dc.contributor.author |
Kim, H.-J. |
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dc.contributor.author |
Jung, S.M. |
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dc.contributor.author |
Yoon, Tae-Sik |
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dc.contributor.author |
Kim, Y.-S. |
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dc.contributor.author |
Lee, H.H. |
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dc.date.accessioned |
2023-12-20T03:36:08Z |
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dc.date.available |
2023-12-20T03:36:08Z |
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dc.date.created |
2021-03-15 |
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dc.date.issued |
2010-10-13 |
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dc.description.abstract |
Thin film transistors (TFTs) with nitrogen incorporated indium zinc tin oxide (IZTO:N) channel layer were fabricated and characterized. For the IZTO:N channel, TFTs was fabricated on heavily doped Si as a common gate electrode and silicon nitride (SiNx) was used as a gate dielectric layer. The IZTO:N layer was formed by spin-coating as precursor type solution and annealed at 600°C The precursors for indium, zinc, and tin were indium chloride, zinc chloride, and tin chloride. The incorporation of nitrogen was accomplished by addition of NH4OH solution. The IZTO:N TFT prepared with the precursor solution having 0.7% NH4OH has show the performance in mobility 1.2cm2/Vs, Ion/off of 106 and threshold voltage of 8.5 V. |
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dc.identifier.bibliographicCitation |
218th ECS Meeting, pp.295 - 299 |
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dc.identifier.doi |
10.1149/1.3481250 |
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dc.identifier.issn |
1938-5862 |
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dc.identifier.scopusid |
2-s2.0-79952645542 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/50669 |
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dc.language |
영어 |
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dc.publisher |
The Electrochemical Society |
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dc.title |
Solution-processed oxide thin film transistors with indium zinc tin oxide semiconductor: Nitrogen effect |
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dc.type |
Conference Paper |
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dc.date.conferenceDate |
2010-10-11 |
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