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- Yoon, Tae-Sik
- Nano Semiconductor Research Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | UK | - |
| dc.citation.conferencePlace | Birmingham | - |
| dc.citation.title | 2012 12th IEEE International Conference on Nanotechnology, NANO 2012 | - |
| dc.contributor.author | Lee, N.J. | - |
| dc.contributor.author | Park, M.R. | - |
| dc.contributor.author | Yoon, Tae-Sik | - |
| dc.contributor.author | Choi, Y.J. | - |
| dc.contributor.author | Kang, C.J. | - |
| dc.date.accessioned | 2023-12-20T02:06:04Z | - |
| dc.date.available | 2023-12-20T02:06:04Z | - |
| dc.date.created | 2021-03-15 | - |
| dc.date.issued | 2012-08-20 | - |
| dc.description.abstract | Electrical properties of silver selenide (Ag2Se) thin film, which is a thickness of 500 nm, were studied using conducting atomic force microscopy (c-AFM). A resistive switching was observed in the sweep voltage range from 7 to +7 V at room temperature. In addition, the Ag/Ag 2Se/Au structure was compared with the Ag2Se/Au structure. It was considered that the resistive switching behavior may cause Ag filaments. The typical resistive characteristics of the Ag2Se thin film were presented, and the mechanism was discussed. | - |
| dc.identifier.bibliographicCitation | 2012 12th IEEE International Conference on Nanotechnology, NANO 2012 | - |
| dc.identifier.doi | 10.1109/NANO.2012.6322099 | - |
| dc.identifier.issn | 1944-9399 | - |
| dc.identifier.scopusid | 2-s2.0-84869175026 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/50649 | - |
| dc.language | 영어 | - |
| dc.publisher | IEEE | - |
| dc.title | Resistive switching characteristics of Ag2Se thin film | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2012-08-20 | - |
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