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DC Field | Value | Language |
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dc.citation.startPage | 105646 | - |
dc.citation.title | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | - |
dc.citation.volume | 125 | - |
dc.contributor.author | Ahir, Namita A. | - |
dc.contributor.author | Takaloo, Ashkan Vakilipour | - |
dc.contributor.author | Nirmal, Kiran A. | - |
dc.contributor.author | Kundale, Somnath S. | - |
dc.contributor.author | Chougale, Mahesh Y. | - |
dc.contributor.author | Bae, Jinho | - |
dc.contributor.author | Kim, Deok-kee | - |
dc.contributor.author | Dongale, Tukaram D. | - |
dc.date.accessioned | 2023-12-21T16:07:54Z | - |
dc.date.available | 2023-12-21T16:07:54Z | - |
dc.date.created | 2021-03-25 | - |
dc.date.issued | 2021-04 | - |
dc.description.abstract | In the present work, we have demonstrated the capacitive coupled non-zero and type-II hysteresis behavior of nickel ferrite (NFO)-titanium oxide (TiO2) nanocomposite. For this, NFO nanoparticles (NPs) and TiO2 NPs were synthesized using hydrothermal and sol-gel method, respectively. The NFO-TiO2 nanocomposite was prepared using a solid-state reaction method and characterized by X-ray diffraction, Fourier transform infrared spectroscopy, field emission scanning electron microscope, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy. The electrical results of the NFO-TiO2 memory device have shown non-zero I-V (unable to cross at origin), cross-over I-V and type-II hysteresis (tangential hysteresis loops) properties and their occurrence was depended upon the magnitude of the electrical stimulus. To further clarify the dominance of the memristive and type-II properties, we have calculated the charge-flux and non-transversal di/dv(t) characteristics of the device based on experimental results. The charge transport mechanisms were investigated and a plausible resistive switching mechanism was reported. Our investigations provide some insights to explain the non-zero and type-II hysteresis behavior of the memristive devices. | - |
dc.identifier.bibliographicCitation | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.125, pp.105646 | - |
dc.identifier.doi | 10.1016/j.mssp.2020.105646 | - |
dc.identifier.issn | 1369-8001 | - |
dc.identifier.scopusid | 2-s2.0-85099000562 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/50557 | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S1369800120315857?via%3Dihub | - |
dc.identifier.wosid | 000618868500004 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCI LTD | - |
dc.title | Capacitive coupled non-zero I-V and type-II memristive properties of the NiFe2O4-TiO2 nanocomposite | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Engineering; Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Capacitive coupling | - |
dc.subject.keywordAuthor | Type-II memristive effect | - |
dc.subject.keywordAuthor | Non-zero hysteresis | - |
dc.subject.keywordAuthor | Nanocomposite | - |
dc.subject.keywordAuthor | Resistive switching | - |
dc.subject.keywordPlus | https://www.sciencedirect.com/science/article/pii/S1369800120315857?via%3Dihub | - |
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