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Yoon, Tae-Sik
Nano Semiconductor Research Lab.
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Tunable threshold resistive switching characteristics of Pt-Fe2O3 core-shell nanoparticle assembly by space charge effect

Author(s)
Baek, Yoon-JaeHu, QuanliYoo, Jae WooChoi, Young JinKang, Chi JungLee, Hyun HoMin, Seok-HongKim, Hyun-MiKim, Ki-BumYoon, Tae-Sik
Issued Date
2013-01
DOI
10.1039/c2nr32886k
URI
https://scholarworks.unist.ac.kr/handle/201301/50255
Citation
NANOSCALE, v.5, no.2, pp.772 - 779
Abstract
Tunable threshold resistive switching characteristics of Pt-Fe2O3 core-shell nanoparticle (NP) assembly were investigated. The colloidal Pt-Fe2O3 core-shell NPs with a Pt core diameter of similar to 3 nm and a total diameter of similar to 15 nm were chemically synthesized by a one-step process. These NPs were assembled as a layer with a thickness of similar to 80 nm by repeated dip-coating between Ti and Pt electrodes on a flexible polyethersulfone (PES) substrate. The Ti/NPs/Pt/PES structure exhibited the threshold switching, i.e. volatile transition from high to low resistance state at a high voltage and vice versa at a low voltage. The current-voltage measurements after charging and discharging NPs revealed that the resistance state and threshold switching voltage of the assembly could be tuned by the space charges stored in high density trap sites of Pt cores in Pt-Fe2O3 core-shell NP assembly. These results demonstrated the possible tuning of threshold switching of core-shell NP assembly by the space charge effect, which can be potentially utilized for the tunable selection device element in nonvolatile memory circuits.
Publisher
ROYAL SOC CHEMISTRY
ISSN
2040-3364
Keyword
IRON-OXIDE NANOPARTICLESMAGNETIC-PROPERTIESNONVOLATILE MEMORYSINGLETRANSITIONDEVICE

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